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Toshiba Semiconductor |
U1BC44,U1GC44,U1JC44
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44,U1GC44,U1JC44
FOR HYBRID USE
Unit: mm
l Average Forward Current
l Repetitive Peak Reverse Voltage
l Mini Plastic Mold Package
: IF (AV) = 1.0A
: VRRM = 100, 400, 600V
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
Repetitive Peak
Reverse Voltage
U1BC44
U1GC44
U1JC44
VRRM
Average
Forward
Current
On Ceramic Substrate
On Glass−epoxy
Substrate
IF (AV)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
IFSM
Junction Temperature
Storage Temperature Range
Tj
Tstg
RATING
100
400
600
1.0
(Ta = 75°C)
0.9
(Ta = 25°C)
30 (50Hz)
33 (60Hz)
−40~150
−40~150
UNIT
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 0.06g
―
―
3−4D1A
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse
Current
Thermal Resistance
SYMBOL
TEST CONDITION
VFM
IFM = 1.0A
IRRM
VRRM = Rated
Rth (j−a)
On ceramic substrate
DC
On glass-epoxy substrate
MIN TYP. MAX UNIT
― ― 1.2 V
― ― 10 µA
― ― 60
°C / W
― ― 120
STANDARD SOLDERING PAD
1 2001-07-18
U1BC44,U1GC44,U1JC44
2 2001-07-18
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