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PDF SB01W05C Data sheet ( Hoja de datos )

Número de pieza SB01W05C
Descripción 50V/ 100mA Rectifier
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! SB01W05C Hoja de datos, Descripción, Manual

Ordering number :EN2995A
SB01W05C
Shottky Barrier Diode (Twin Type · Cathode Common)
50V, 100mA Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recorvery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1169A
[SB01W05C]
1:Anode
2:No connection
3:Cathode
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1cycle
Electrical Characteristics at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recorvery Time
Thermal Resistance
· Marking:AH
trr Test Circuit
Symbol
Conditions
VR
VF
IR
C
trr
Rthj-a(1)
Rthj-a(2)
IR=50µA
IF=100mA
VR=25V
VR=10V, f=1MHz
IF=IR=10mA, See specified Test Circuit
Mounted on Cu-foild area of 16mm2×0.2mm on glass
epoxy board
Electrical Connection
SANYO:CP
Ratings
50
55
100
2
–55 to +125
–55 to +125
Unit
V
V
mA
A
˚C
˚C
Ratings
min typ
50
4.4
560
410
max
0.55
15
10
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/72696GI (KOTO)/1269TA, TS No.2995-1/2

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