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4GBL06 반도체 회로 부품 판매점

4.0 Amps Single Phase Full Wave Bridge Rectifier



International Rectifier 로고
International Rectifier
4GBL06 데이터시트, 핀배열, 회로
PART OBSOLETE - EOL18
Bulletin I2716 rev. F 06/03
4.0 Amps Single Phase Full Wave
4GBL Series
Bridge Rectifier
Features
Diode chips are glass passivated
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 VRMS)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
IO(AV) = 4A
VRRM = 50/ 800V
Description
These GBL Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters
4GBL
Units
IO
@ TC
IFSM @ 50Hz
@ 60Hz
I2t @ 50Hz
@ 60Hz
VRRM
TJ
range
4
50
150
158
113
104
50 to 800
- 55 to 150
A
°C
A
A
A2s
A2s
V
oC
4GBL
www.irf.com
1


4GBL06 데이터시트, 핀배열, 회로
4GBL Series
Bulletin I2716 rev. F 06/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM, max repetitive VRMS, maximum
Type number Code peak rev. voltage RMS voltage
TJ = TJ max.
V
TJ = TJ max.
V
4GBL
005
01
02
04
06
08
50
100
200
400
600
800
35
70
140
280
420
560
VRSM, max non-repetitive IRRM max.
IRRM max.
reverse voltage
@ rated VRRM @ rated VRRM
TJ = TJ max.
TJ = 25°C TJ = 150°C
V µA µA
75 5 400
150 5 400
275 5 400
500 5 400
725 5 400
900 5 400
Forward Conduction
Parameters
IO Maximum DC output current
IFSM
I2t
VFM
IRM
VRRM
Maximum peak, one-cycle
non-repetitive surge current,
following any rated load condition
and with rated VRRM reapplied
Maximum I2t for fusing,
initial TJ = TJ max
Maximum peak forward voltage
per diode
Typical peak reverse leakage
curren t per diode
Maximum repetitive peak
reverse voltage range
4GBL
4
3.2
150
158
113
104
0.975
5
50 to 800
Unit
A
Conditions
TC = 50°C, Resistive & inductive load
TC = 50°C, Capacitive load
t = 10ms, 20ms
t = 8.3ms, 16.7ms TJ = 150°C
A2s t = 10ms
t = 8.3ms
V TJ = 25 oC, IFM = 4A
µA TJ = 25 oC, 100% VRRM
V
Thermal and Mechanical Specifications
Parameters
4GBL
Unit
TJ
Tstg
RthJC
RthJA
W
Operating and storage
temperature range
Max. thermal resistance
junction to case
Thermal resistance,
junction to ambient
Approximate weight
-55 to 150
6.5
22
2 (0.07)
oC
°C/ W
°C/ W
g (oz)
Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate
Conditions
DC rated current through bridge (1)
DC rated current through bridge (1)
2 www.irf.com




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