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47CTQ020 반도체 회로 부품 판매점

Schottky Rectifier ( Diode )



International Rectifier 로고
International Rectifier
47CTQ020 데이터시트, 핀배열, 회로
SCHOTTKY RECTIFIER
PD-20540 rev. E 10/99
47CTQ020
47CTQ020S
47CTQ020-1
40 Amp
Major Ratings and Characteristics
Characteristics
Values Units
IF(AV) Rectangular
waveform
VRRM
IFSM @ tp = 5 µs sine
VF @20 Apk, TJ= 125 °C
40
20
1000
0.34
TJ -55to150
A
V
A
V
°C
Description/Features
This center tap Schottky rectifier has been optimized for ultra
low forward voltage drop specifically for 3.3V output power
supplies. The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in parallel switching power supplies,
converters, reverse battery protection, and redundant power
subsystems.
150 °C TJ operation
Center tap configuration
Optimized for 3.3V application
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
47CTQ020
Case Styles
47CTQ020S
47CTQ020-1
TO-220
www.irf.com
D2PAK
TO-262
1


47CTQ020 데이터시트, 핀배열, 회로
47CTQ020, 47CTQ020S, 47CTQ020-1
PD-20540 rev. E 10/99
Voltage Ratings
Part number
47CTQ020, ..020S, ..020-1
VR Max. DC Reverse Voltage (V)
VR Max. DC Reverse Voltage (V)
Absolute Maximum Ratings
@ 125° C
@ 150° C
20
10
Parameters
47CTQ Units
Conditions
IF(AV) Max.AverageForward (PerDevice)
Current
(PerLeg)
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent (Per Leg)
EAS Non-RepetitiveAvalancheEnergy
(Per Leg)
IAR RepetitiveAvalancheCurrent
(Per Leg)
Electrical Specifications
40
20
1000
250
18
3
A 50%dutycycle@TC=135°C,rectangularwaveform
A
5µs Sine or 3µs Rect. pulse
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated Vrrm applied
mJ TJ = 25 °C, IAS =3 Amps, L =3 mH
A Currentdecayinglinearlytozeroin1µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Parameters
VFM Max. Forward Voltage Drop
(Per Leg)
(1)
47CTQ
0.45
0.51
0.34
Units
V
V
V
@ 20A
@ 40A
@ 20A
0.44 V @ 40A
Conditions
TJ = 25 °C
TJ = 125 °C
0.31 V @ 20A
0.42 V @ 40A
TJ = 150 °C
IRM Max. Reverse Leakage Current
(Per Leg)
(1)
3
310
60
45
306
VF(TO) Threshold Voltage
rt Forward Slope Resistance
CT Max. Junction Capacitance (Per Leg)
LS Typical Series Inductance (Per Leg)
0.188
5.9
3000
5.5
dv/dt Max. Voltage Rate of Change
(Rated VR)
10,000
Thermal-Mechanical Specifications
Parameters
47CTQ
mA TJ = 25 °C
mA TJ = 125 °C
mA TJ = 125 °C
mA TJ = 125 °C
mA TJ = 150 °C
VR = rated VR
VR = 5V
VR = 3.3V
VR = 10V
V TJ = TJ max.
m
pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/ µs
Units
(1) Pulse Width < 300µs, Duty Cycle <2%
Conditions
TJ Max.JunctionTemperatureRange
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
to Case (Per Leg)
-55to150
-55to150
1.5
°C
°C
°C/W DCoperation
RthJC Max.ThermalResistanceJunction
to Case (Per Package)
0.75 °C/W DCoperation
RthCS TypicalThermalResistance,Case
to Heatsink
0.50 °C/W Mountingsurface,smoothandgreased
(only for TO-220)
wt ApproximateWeight
2(0.07) g(oz.)
T MountingTorque
Min.
Max.
6(5) Kg-cm
12(10) (Ibf-in)
2 www.irf.com




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