|
Comchip Technology |
SMD Ultra Fast Recovery Rectifier
CURA101 Thru CURA107
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
COMCHIP
www.comchip.com.tw
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Ultra fast recovery time: 50 - 75 nS
Low leakage current
Mechanical data
Case: Mini SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.063 gram
DO-214AC (SMA)
0.067(1.70)
0.051(1.29)
0.180(4.57)
0.160(4.06)
0.091(2.31)
0.067(1.70)
0.059(1.50)
0.035(0.89)
0.209(5.31)
0.185(4.70)
0.110(2.79)
0.086(2.18)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Parameter
Symbol
Max. Repetitive Peak Reverse Voltage VRRM
CURA
101
50
Max. DC Blocking Voltage
VDC
50
Max. RMS Voltage
VRMS
35
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
IFSM
Max. Average Forward Current
Io
Max. Instantaneous Forward Current
at 1.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100C
IR
Max. Thermal Resistance (Note 1)
R JA
Operating Junction Temperature
Tj
Storage Temperature
TSTG
CURA
102
100
100
70
CURA
103
200
200
140
CURA
104
400
400
280
CURA
105
600
600
420
30
1.0
50
1.0
1.3
5.0
50
42
-55 to +150
-55 to +150
CURA
106
800
800
560
1.7
75
CURA
107
1000
1000
700
Unit
V
V
V
A
A
V
nS
uA
C/W
C
C
Note 1: Thermal resistance from junction to ambient.
MDS0208019B
Page 1
SMD Ultra Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CURA101 Thru CURA107)
Fig. 1 - Reverse Characteristics
1000
Fig.2 - Forward Characteristics
10
Tj=125 C
100
1.0
10 0.1
1.0 Tj=25 C
0.1
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
0.01
0.001
Tj=25 C
Pulse width 300uS
4% duty cycle
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage (V)
Fig. 3 - Junction Capacitance
175
120
100
80
60
40
20
0
0.01
=1MHz and applied
4VDC reverse voltage
0.1 1.0 10
Reverse Voltage (V)
100
Fig. 4 - Non Repetitive Forward
Surge Current
30
8.3mS Single Half Sine
Wave JEDEC methode
24
18
Tj=25 C
12
6
0
1
5 10
50 1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
trr
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
Fig. 6 - Current Derating Curve
1.4
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
0 0 25 50 75 100 125 150 175
Ambient Temperature ( C)
MDS0208019B
Page 2
|