BAT750 반도체 회로 부품 판매점
0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
|
 Diodes Incorporated |
BAT750
0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
• Very Low Forward Voltage Drop
• High Conductance
• For Use in DC-DC Converter, PCMCIA, and Mobile
Telecommunications Applications
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Polarity: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
TOP VIEW
Device Schematic
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Value
40
28
0.75
5.5
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
350
286
-55 to +125
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V(BR)R
40
45
⎯
V IR = 300uA
225 280
IF = 50mA
235 310
IF = 100mA
290 350
IF = 250mA
VF
⎯ 340 420 mV IF = 500mA
390 490
IF = 750mA
420 540
475 650
IF = 1000mA
IF = 1500mA
IR ⎯ 50 100 μA VR = 30V
CT
⎯ 175 ⎯
⎯ 25 ⎯
pF VR = 0V, f = 1.0MHz
pF VR = 25V, f = 1.0MHz
trr
⎯
⎯
10
ns IF = IR = 100mA,
Irr = 10mA. See figure 6.
Notes:
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAT750
Document number: DS30216 Rev. 12 - 2
1 of 3
www.diodes.com
June 2008
© Diodes Incorporated
10
1
TA = 125ºC
0.1
TA = -65ºC
0.01
0.001
TA = 0ºC
TA = 25ºC
TA = 75ºC
TA = 100ºC
0.0001
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
1,000
100
10
1
0 5 10 15 20 25 30 35 40
VR, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
1.0
0.75
0.50
10,000
BAT750
1,000
100
10
1.0
0.1
0.01
0 10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
150
125
100
75
50
25
1 10 20 30 40 50
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Safe Operating Area
trr Test Circuit
0.25
0
0 25 50 75 100 125 150
TL, LEAD TEMPERATURE (°C)
Fig. 5 Forward Current Derating Curve
5V
trr
BAT750
Document number: DS30216 Rev. 12 - 2
2 of 3
www.diodes.com
June 2008
© Diodes Incorporated
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Diodes Incorporated
( diodes )
BAT750 rectifier
데이터시트 다운로드 :
[ BAT750.PDF ]
[ BAT750 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BAT750
0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated
BAT754
Schottky barrier double diodes - NXP Semiconductors
BAT754A
Schottky barrier double diodes - NXP Semiconductors
BAT754C
Schottky barrier double diodes - NXP Semiconductors
BAT754L
Schottky barrier triple diode - NXP Semiconductors
BAT754S
Schottky barrier double diodes - NXP Semiconductors