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EIC discrete Semiconductors |
AB40 - AB380/C 1000G
AVALANCHE GLASS
PASSIVATED BRIDGE RECTIFIERS
PRV : 100 - 900 Volts
Io : 1.0 Amperes
WOB
FEATURES :
* Glass passivated chip
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current For
Free Air Operation at Tc = 45°C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at TJ = 125 °C
Rating for fusing at TJ = 125°C ( t < 100 ms.)
Maximum Series Resistor C-Load VRMS = ± 10%
Maximum load Capacitance + 50%
-10%
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
V BO(min.)
VBO(max.)
AB40-
C1000G
100
40
100
150
600
AB80-
C1000G
200
80
200
250
700
AB125-
C1000G
300
125
300
350
800
AB250-
C1000G
600
250
600
700
1150
AB380-
C1000G
900
380
900
1000
1450
UNIT
Volts
Volts
Volts
Volts
Volts
IF(AV)
1.2 Amps.
1.0
IFSM 40 Amps.
I2t 10 A2S
Rt 1.0 2.0 4.0 8.0 12.0 Ω
CL
5000
2500
1000
500
200 µF
VF 1.0 Volts
IR
RθJA
TJ
TSTG
10
36
- 50 to + 125
- 50 to + 125
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
UPDATE : JUNE 19,1998
RATING AND CHARACTERISTIC CURVES ( AB40 - AB380/C1000G )
FIG.1 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
AB40 C1000G - AB125 C1000G
1.2
Resistive or
1.0 Inductive load.
Capacitive Load
0.8 0-10µF
10-100µF
0.6 =100µF
0.4
PC Board
0.375(9.5mm)
0.2
0
0
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
20 40 60 80 100 120
CASE TEMPERATURE, ( °C)
140
FIG.2 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
AB250 C1000G - AB380 C1000G
1.2
Resistive or
1.0 Inductive load.
Capacitive Load
0.8
0-10µF
10-100µF
0.6 =100µF
0.4
PC Board
0.375(9.5mm)
0.2
0
20
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
40 60
80 100
120
CASE TEMPERATURE, ( °C)
140
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
10
1
TJ = 25 °C
0.1
Pulse Width = 300 ∝s
1 % Duty Cycle
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.5 - MAXIMUM NON-REPETITIVE
PEAK FORWARD CURRENT
40
30
20
10
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
100
60
40
20
10
6 TJ = 25 °C
4 f = 1MHz
Vsig = 50mVp-p
2
1
0.1 0.2 0.6 1 2 4 6
10 20 40
100
REVERSE VOLTAGE, VOLTS
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