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AG12J 반도체 회로 부품 판매점

Silicon Rectifier Cells with polysiloxan passivation



Diotec Semiconductor 로고
Diotec Semiconductor
AG12J 데이터시트, 핀배열, 회로
Silicon Rectifier Cells
with polysiloxan passivation
AG 12A … AG 12M
Silizium-Gleichrichterzellen
mit Polysiloxan-Passivierung
Dimensions / Maße in mm
Nominal current – Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Weight approx. – Gewicht ca.
Standard packaging bulk
Standard Lieferform lose
12 A
50…1000 V
0.3 g
Maximum ratings and Characteristics
Type
Typ
AG 12A
AG 12B
AG 12D
AG 12G
AG 12J
AG 12K
AG 12M
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Kenn- und Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
80
130
250
450
700
1000
1300
Max. forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TT = 100/C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing – Grenzlastintegral, t < 10 ms
TA = 25/C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Forward voltage
Durchlaßspannung
Tj = 25/C IF = 12 A
Leakage current – Sperrstrom
Tj = 25/C VR = VRRM
IFAV 12 A 1)
IFRM
60 A 1)
IFSM 500 A
i2t 1250 A2s
Tj – 50...+150/C
TS – 50...+150/C
VF < 0.95 V
IR < 10 :A
1) Max. temperature of the terminals TT = 100/C – Max. Temperatur der Kontaktflächen TT = 100/C
400
28.02.2002




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AG12J rectifier

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