파트넘버.co.kr BR1004 데이터시트 PDF


BR1004 반도체 회로 부품 판매점

SILICON BRIDGE RECTIFIERS



EIC discrete Semiconductors 로고
EIC discrete Semiconductors
BR1004 데이터시트, 핀배열, 회로
BR1000 - BR1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
BR10
0.158 (4.00)
0.142 (3.60)
0.520 (13.20)
0.480 (12.20)
AC
0.290 (7.36)
0.210 (5.33)
AC
0.77 (19.56)
0.73 (18.54)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forw ard Current Tc=55°C
IF(AV)
10 Amp.
Peak Forw ard Surge Current Single half sine w ave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forw ard Voltage per Diode at IF = 5 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
Amp.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : APRIL 23, 1998


BR1004 데이터시트, 핀배열, 회로
RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
12
10
8
6
4
2 HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x8.2cm x 0.3cm) Al.-PLATE
0
0 25 50 75 100 125
150
CASE TEMPERATURE, ( °C)
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200 TJ = 50 °C
150
100
50 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 µs
1 % Duty Cycle
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
0.1 TJ = 25 °C
0.01 0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)




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BR1004 rectifier

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