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IXYS |
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
VHF 36
IdAVM = 40 A
VRRM = 800-1600 V
VRSM
V
DSM
V
900
1300
1500
1700
VRRM
V
DRM
V
800
1200
1400
1600
Type
VHF 36-08io5
VHF 36-12io5
VHF 36-14io5
VHF 36-16io5
13
2
6
4
8
1 23
6
4
8
Symbol
I
dAV
IdAVM ¬
I ,I
FRMS TRMS
IFSM, ITSM
I2t
(di/dt)
cr
(dv/dt)
cr
VRGM
PGM
P
GAVM
TVJ
TVJM
T
stg
VISOL
Md
Weight
Test Conditions
Maximum Ratings
T
K
=
85°C,
module
module
per leg
36 A
40 A
28 A
TVJ = 45°C;
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
45°C
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
125°C
f =50 Hz, tP =200 µs
V = 2/3 V
D DRM
IG = 0.3 A,
diG/dt = 0.3 A/µs
repetitive, I = 50 A
T
non repetitive, IT = 1/2 • IdAV
T = T ; V = 2/3 V
VJ
VJM
DR
DRM
RGK = ∞; method 1 (linear voltage rise)
320
350
280
310
500
520
390
400
150
500
1000
10
TVJ = TVJM
I =I
T TAVM
tp = 30 µs
t=
p
500 µs
tp = 10 ms
≤ 10
≤5
≤1
0.5
-40...+125
125
-40...+125
50/60 Hz, RMS
IISOL ≤ 1 mA
Mounting torque
t = 1 min
t=1s
(M5)
(10-32 UNF)
3000
3600
2-2.5
18-22
50
A
A
A
A
A2s
A2s
A2s
A2s
A/µs
A/µs
V/µs
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
¬ for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Features
l Package with DCB ceramic base plate
l Isolation voltage 3600 V~
l Planar passivated chips
l ¼" fast-on terminals
l UL registered E 72873
Applications
l Supply for DC power equipment
l DC motor control
Advantages
l Easy to mount with two screws
l Space and weight savings
l Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
F4- 35
VHF 36
Symbol
IR, ID
V,V
TF
VT0
r
T
VGT
IGT
VGD
I
GD
IL
IH
t
gd
t
q
Qr
RthJC
RthJK
dS
d
A
a
Test Conditions
Characteristic Values
VR = VRRM; VD = VDRM
TVJ = TVJM
TVJ = 25°C
I,
T
I
F
=
45
A;
T
VJ
=
25°C
For power-loss calculations only (TVJ = 125°C)
≤ 5 mA
≤ 0.3 mA
≤ 1.45 V
0.85 V
13 mΩ
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
TVJ = TVJM;
T =T ;
VJ VJM
VD = 2/3 VDRM
V = 2/3 V
D DRM
IG = 0.3 A; tG = 30 µs; TVJ = 25°C
diG/dt = 0.3 A/µs;
TVJ = -40°C
TVJ = 125°C
TVJ = 25°C; VD = 6 V; RGK = ∞
T
VJ
=
25°C;
V
D
=
1/2
V
DRM
IG = 0.3 A; diG/dt = 0.3 A/µs
T
VJ
=
125°C,
I
T
=
15
A,
t
P
=
300
µs,
V
R
=
100
V
di/dt = -10 A/µs, dv/dt = 20 V/µs, VD = 2/3 VDRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
≤ 1.0 V
≤ 1.2 V
≤ 65 mA
≤ 80 mA
≤ 50 mA
≤ 0.2 V
≤ 5 mA
≤ 150 mA
≤ 200 mA
≤ 100 mA
≤ 100 mA
≤ 2 µs
typ. 150 µs
75 µC
1.15 K/W
0.29 K/W
1.55 K/W
0.39 K/W
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.6 mm
6.3 mm
50 m/s2
10
V
VG
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
3
2
1
1
6
5
4
4: PGAV = 0.5 W
IGD, TVJ = 125°C
0.1
5: PGM = 1 W
6: PGM = 10 W
1 10 100 1000 mA
IG
Fig. 1 Gate trigger range
1000
µs
tgd
100
TVJ = 25°C
typ. Limit
10
1
10 100 mA 1000
IG
Fig. 2 Gate controlled delay time tgd
F4 - 36
© 2000 IXYS All rights reserved
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