파트넘버.co.kr VUI9-06N7 데이터시트 PDF


VUI9-06N7 반도체 회로 부품 판매점

Rectifier Module



IXYS 로고
IXYS
VUI9-06N7 데이터시트, 핀배열, 회로
Advanced Technical Information
VUI 9-06N7
Rectifier Module for
Power Factor Correction
Fast Single Phase Rectifier
Ultra Fast Boost Chopper
VRRM = 1200 V
IFAV25 = 15 A
VCES = 600 V
IC25 = 37 A
Typical Rectified Mains Power
Pn = 900 W at Vn = 110 V
Pn = 2100 W at Vn = 240 V
at VDC = 400 V, fT = 75 kHz, TC = 80°C
D 11
D 13
JN
D1
D 12
H
D 14
AE
7
BG
G
T
Input Rectifier Bridge D11 - D14
Symbol
VRRM
IFAV25
IFAV80
IFSM
Conditions
TC = 25°C; sine 180°
TC = 80°C; sine 180°
TVJ = 25°C; t = 10 ms sine 50 Hz
Maximum Ratings
1200
V
15 A
10 A
75 A
Symbol
VF
I
R
trr
RthJC
RthJS
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IF = 10 A
TVJ = 25°C
TVJ = 125°C
V =V
R RRM
TVJ = 25°C
TVJ = 125°C
VR = 100 V; IF = 10 A; -di/dt = 5 A/µs
(per diode)
with heat transfer paste
1.4 1.8 V
1.6 V
0.05 mA
0.5 mA
1 µs
2.5 K/W
tbd K/W
Application
• single phase rectification with power
factor correction (PFC)
• low harmonic content of mains current
• mains current and voltage in phase
• wide input voltage range, controlled
output voltage
Features
• high level of integration -
only one power semiconductor
module required for the whole PFC
rectifier
• standard PFC control ICs useable
• fast rectifier diodes for enhanced EMC
behaviour
• NPT IGBT with low saturation voltage,
ultra fast switching capability,
high RBSOA and short circuit
ruggedness
• internally series connected
HiPerFREDTM free wheeling diode
for fast and soft reverse recovery at
high switching frequency
• package with insulated DCB base and
soldering pins for PCB mounting
© 2000 IXYS All rights reserved
1-3


VUI9-06N7 데이터시트, 핀배열, 회로
Chopper T
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
Conditions
TVJ = 25°C to 150°C
Continous
TC = 25°C
TC = 80°C
VCE = 600 V; RG = 10 W; TVJ = 125°C
Clamped inductive load; L = 100 µH
VCE = 600 V; VGE = ±15 V; RG = 10 W;
TVJ = 125°C; non-repetitive
Maximum Ratings
600 V
±20 V
37 A
25 A
ICM = 100
VCEK £ VCES
10
A
µs
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
R
thJS
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 10 A; VGE = 15 V ; TVJ = 25°C
TVJ = 125°C
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ±20 V
Inductive load, TVJ = 125°C
V = 400 V; I = 10 A
CE C
VGE = ±15 V; RG = 10 W
1.5 1.8 V
1.6 V
3 5V
0.04 mA
1 mA
100 nA
30 ns
50 ns
320 ns
70 ns
0.60 mJ
0.31 mJ
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 480 V; VGE = 15 V; IC = 10 A
with heat transfer paste
1600
140
tbd
pF
nC
0.96 K/W
K/W
Chopper D1
Symbol
VRRM
IF25
IF80
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
Maximum Ratings
600 V
35 A
22 A
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
V
F
IR
IRM
trr
RthJC
RthJS
I = 10 A;
F
TVJ =
25°C
TVJ = 125°C
VR = VRRM; TVJ = 25°C
TVJ = 125°C
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 400 V
with heat transfer paste
2.2 3.2 V
2.4 V
0.1 mA
0.1 mA
tbd A
tbd ns
1.15 K/W
tbd K/W
© 2000 IXYS All rights reserved
VUI 9-06N7
2-3




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VUI9-06N7 rectifier

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