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S6210A 반도체 회로 부품 판매점

SILICON CONTROLLED RECTIFIERS



Digitron Semiconductors 로고
Digitron Semiconductors
S6210A 데이터시트, 핀배열, 회로
S6200, S6210, S6220
SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
S6200A, S6210A, S6220A
S6200B, S6210B, S6220B
S6200D, S6210D, S6220D
S6200M, S6210M, S6220M
VRRM, VDRM
100
200
400
600
Volts
Peak non-repetitive forward and non-repetitive reverse blocking voltage(1)
S6200A, S6210A, S6220A
S6200B, S6210B, S6220B
S6200D, S6210D, S6220D
S6200M, S6210M, S6220M
VDSM, VRSM
150
250
500
700
Volts
Forward on-state current RMS (TC = 75°C)
IT(RMS) 20 Amps
Peak non-repetitive surge current
(one cycle, 60Hz, preceded and followed by rated current, TC = 75°C)
ITSM 200 Amps
Circuit fusing considerations
(TJ = -65 to +100°C, t = 8.3ms)
I2t 170 A2s
Peak gate power (10µs max.)
PGM 40 Watts
Average gate power
PG(AV) 0.5 Watts
Operating junction temperature range
TJ -65 to +100 °C
Storage temperature range
Tstg -65 to +150
°C
Mounting torque
30 In. lb.
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated
blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
S6200 SERIES
S6210 SERIES, S6220 SERIES
Symbol
RӨJC
Maximum
1.2
1.4
Unit
°C/W
Rev. 20150306


S6210A 데이터시트, 핀배열, 회로
S6200, S6210, S6220
SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Instantaneous forward breakover voltage
(gate open, TC = 100°C)
S6200A, S6210A, S6220A
S6200B, S6210B, S6220B
S6200D, S6210D, S6220D
S6200M, S6210M, S6220M
V(BO)O
100
200
400
600
-
-
-
-
-
-
-
-
Peak blocking current
(Rated VDRM @ TC = 100°C)
TC = 25°C
IRRM -
IDRM -
- 10
-2
Peak on-state voltage
(IT = 100A peak)
VT -
- 2.4
Gate trigger current (continuous dc)
(Main terminal voltage = 12V, RL = 30Ω)
IGT -
- 15
Gate trigger voltage (continuous dc)
(Main terminal voltage = 12V, RL = 30Ω)
VGT - - 2
Holding current (either direction)
(Main terminal voltage = 12V, gate open)
IH
-
- 20
Gate controlled turn-on time
tgt
(VD = V(BO)O, IT = 30A peak, IGT = 200mA, rise time =
0.1µs)
-2-
Critical rate of rise of off-state voltage
(VD = V(BO)O, exponential rise, gate open, TC = 100°C)
S6200A,D, S6210A,D, S6220A,D
S6200B, S6210B, S6220B
S6200D, S6210D, S6220D
dv/dt
10
10
10
100
150
75
-
-
-
Unit
Volts
µA
mA
Volts
mA
Volts
mA
µs
V/µs
Rev. 20150306




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S6210A rectifier

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