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5R3S 반도체 회로 부품 판매점

HYPER FAST RECTIFIER



SSDI 로고
SSDI
5R3S 데이터시트, 핀배열, 회로
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
__ R3S __
Screening3/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Family/Voltage
2 = 20V
3 = 30V
4 = 40V
5 = 50V
7 = 70V
10 = 100V
12 = 125V
15 = 150V
20 = 200V
2R3S THRU 20R3S
8 AMPS
20 – 200 VOLTS
35 nsec
HYPER FAST RECTIFIER
Features:
Hyper Fast Recovery: 35nsec Maximum
Low Forward Voltage Drop
Low Reverse Leakage Current
Single Chip Construction
Hermetically Sealed Package
Metalurgically Bonded Construction
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings 2/
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
2R3S
3R3S
4R3S
5R3S
7R3S
10R3S
12R3S
15R3S
20R3S
Symbol
VRRM
VRWM
VR
Io
IFSM
TOP &
TSTG
RθJC
Value
20
30
40
50
70
100
125
150
200
8
200
-65 to +175
1.5
Units
Volts
Amps
Amps
ºC
ºC/W
DO-4:
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
3/ Screened to MIL-PRF-19500.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0029D
DOC


5R3S 데이터시트, 핀배열, 회로
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Instantaneous Forward Voltage Drop
(IF=8A, TA=25 ºC, 300μsec pulse)
2R3S THRU 20R3S
Symbol
VF
Max
0.90
Units
VDC
Reverse Leakage Current
(Rated VR, TA=25 ºC, 300μsec pulse minimum)
IR1 100
μA
Reverse Leakage Current
(Rated VR, TA=100 ºC, 300μsec pulse minimum)
IR2 2.0
mA
Reverse Recovery Time
(TA=25 ºC, IF = 0.5A, IR = 1.0A, IRR = 0.25A)
tRR 35 nsec
Typical Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
CJ 300
pF
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
Case Outline: DO-4
Stud: Cathode
Lead: Anode
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0029D
DOC




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