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MBR4015LWT 반도체 회로 부품 판매점

Schottky Power Rectifier



ON Semiconductor 로고
ON Semiconductor
MBR4015LWT 데이터시트, 핀배열, 회로
MBR4015LWT
SWITCHMODEt
Schottky Power Rectifier
TO247 Power Package
This device employs the Schottky Barrier principle in a large area
metaltosilicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
Highly Stable Oxide Passivated Junction
Guardring for Overvoltage Protection
Low Forward Voltage Drop
Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating.
Full Electrical Isolation without Additional Hardware
PbFree Package is Available*
Mechanical Characteristics
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
15
V
Average Rectified Forward Current
(At Rated VR, TC = 120°C)
Per Leg
Per Package
IO
A
20
40
Peak Repetitive Forward Current,
IFRM 40 A
(At Rated VR, Square Wave,
20 kHz, TC = 95°C)
Per Leg
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load
IFSM 120 A
Conditions Halfwave, Single Phase,
60 Hz) Per Package
Storage/Operating Case Temperature
Tstg, TC 55 to +150 °C
Operating Junction Temperature (Note 1)
TJ 55 to +150 °C
Voltage Rate of Change,
(Rated VR, TJ = 25°C)
dv/dt
10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES, 15 VOLTS
1
2
3
1
23
TO247
CASE 340L
STYLE 2
MARKING DIAGRAM
MBR4015LWT
AYWWG
MBR4015LWT
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
Device
MBR4015LWT
MBR4015LWTG
Package
TO247
TO247
(PbFree)
Shipping
30 Units / Rail
30 Units / Rail
© Semiconductor Components Industries, LLC, 2010
March, 2010 Rev. 9
1
Publication Order Number:
MBR4015LWT/D


MBR4015LWT 데이터시트, 핀배열, 회로
MBR4015LWT
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Thermal Resistance, JunctiontoCase
JunctiontoAmbient
Per Leg
Per Leg
RqJC
RqJA
0.57
55
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 Per Leg
VF TJ = 25°C TJ = 100°C
(IF = 20 A)
(IF = 40 A)
0.42 0.36
0.50 0.48
Maximum Instantaneous Reverse Current (Note 2), See Figure 4 Per Leg
IR TJ = 25°C TJ = 100°C
(VR = 15 V)
(VR = 7.5 V)
5.0
2.7
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
530
370
Unit
°C/W
Unit
V
mA
100
1000 1000
100
TJ = 100°C
10
1.0
TJ = 25°C
0.1
0
TJ = -40°C
0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Per Leg
100
10 TJ = 100°C
TJ = 25°C
1.0
0.1
0
0.2 0.4 0.6
0.8 1.0 1.2
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage Per Leg
10E+0
10E+0
1.0E+0
100E-3
TJ = 100°C
1.0E+0
100E-3
TJ = 100°C
10E-3
1.0E-3
TJ = 25°C
10E-3
1.0E-3
TJ = 25°C
100E-6
0
5.0 10
VR, REVERSE VOLTAGE (V)
100E-6
15 0
5.0 10
VVRR,,RREEVVERESRESVEOVLTOAGLTEA(VGOELT(VS))
15
Figure 3. Typical Reverse Current Per Leg
Figure 4. Maximum Reverse Current Per Leg
http://onsemi.com
2




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MBR4015LWT rectifier

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