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PDF WCD6C60 Data sheet ( Hoja de datos )
| Número de pieza | WCD6C60 | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Winsemi | |
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Features
� Repetitive Peak Off-State Voltage : 600V
� R.M.S On-State Current ( IT(RMS)= 6 A )
� Low On-State Voltage (1.4V(Typ.) @ ITM)
� Isolation Voltage(VISO=1500V AC)
WCD6C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current(180°
Conduction Angle)
Tc =110 °C
IT(RMS)
R.M.S On-State Current(180°
Conduction Angle)
Tc =110 °C
ITSM Surge On-State Current
1/2 Cycle, 60Hz, Sine
WaveNon-Repetitive
I2t I2t for Fusing
t =10ms
di/dt Critical rate of rise of on-state current F=60Hz,Tj=125 °C
PGM Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power
Dissipation
Tj=125 °C
IFGM Forward Peak Gate Current
VRGM
Reverse Peak Gate Voltage
VISO
Isolation Breakdown voltage(R.M..S)
A,C.1minute
TJ Operating Junction Temperature
TSTG
Storage Temperature
Ratings Units
600 V
3.8 A
6A
66 A
21 A2s
50 A/㎲
5W
0.5 W
2
5.0
1500
-40~125 °C
-40~150 °C
A
V
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
3.12
89
Units
℃/W
℃/W
1 page  
TO-252 Package Dimension
WCD6C60
Unit: mm
Steady, keep you advance
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WCD6C60.PDF ] | |
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