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6CWQ10FNPbF 반도체 회로 부품 판매점

Schottky Rectifier ( Diode )



Vishay 로고
Vishay
6CWQ10FNPbF 데이터시트, 핀배열, 회로
6CWQ10FNPbF
Vishay High Power Products
Schottky Rectifier, 2 x 3.5 A
Base
common
cathode
4
D-PAK
2
Common
1 cathode
Anode
3
Anode
PRODUCT SUMMARY
IF(AV)
VR
2 x 3.5 A
100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 µs sine
VF 3 Apk, TJ = 125 °C (per leg)
TJ Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
Available
RoHS*
COMPLIANT
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for AEC Q101 level
DESCRIPTION
The 6CWQ10FNPbF surface mount, center tap, Schottky
rectifier series has been designed for applications requiring
low forward drop and small foot prints on PC board. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
VALUES
7
100
440
0.63
- 40 to 150
UNITS
A
V
A
V
°C
6CWQ10FNPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 135 °C, rectangular waveform
3.5
7
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 10 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
440
70
5.0
0.5
UNITS
A
mJ
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94250
Revision: 13-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
1


6CWQ10FNPbF 데이터시트, 핀배열, 회로
6CWQ10FNPbF
Vishay High Power Products Schottky Rectifier, 2 x 3.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward
voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse
leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
Forward slope resistance
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
3A
6A
3A
6A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.81
0.96
0.63
0.74
1
4.9
0.48
30.89
92
5.0
10 000
UNITS
V
mA
V
mΩ
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
per leg
per device
RthJC
DC operation
See fig. 4
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
UNITS
- 40 to 150
°C
4.70
°C/W
2.35
0.3 g
0.01 oz.
6CWQ10FN
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 94250
Revision: 13-Aug-08




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Schottky Rectifier ( Diode ) - Vishay