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MBR30H100C 반도체 회로 부품 판매점

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER



BCD 로고
BCD
MBR30H100C 데이터시트, 핀배열, 회로
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
General Description
Main Product Characteristics
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage opera-
tion, and particularly, in high frequency circuits where
low switching losses and low noise are required.
IF(AV)
VRRM
TJ
VF(max)
2*15A
100V
175oC
0.67V
MBR30H100C is available in TO-220-3, TO-220-3(2)
and TO-220F-3 packages
Features
· Low Forward Voltage: 0.67V @125oC
· High Surge Capacity
· 175oC Operating Junction Temperature
· 30 A Total (15A Each Diode Leg)
· Guard-Ring for Stress Protection
· Pb-Free Package
Applications
· Power Supply Output Rectification
· Power Management
· Instrumentation
Mechanical Characteristics
· Case: Epoxy, Molded
· Epoxy Meets UL 94 V-0 @ 0.125 in
· Weight (Approximately):
2 Grams (TO-220-3, TO-220-3(2) and
TO-220F-3)
· Finish: All External Surfaces Corrosion Resistant
and Terminal
· Leads are Readily Solderable
· Lead Temperature for Soldering Purposes:
260oC Maximumfor 10 Seconds
TO-220F-3
TO-220-3
TO-220-3(2)
Apr. 2009 Rev. 1. 2
Figure 1. Package Type of MBR30H100C
BCD Semiconductor Manufacturing Limited
1


MBR30H100C 데이터시트, 핀배열, 회로
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Pin Configuration
MBR30H100C
(TO-220-3)
T Package
(TO-220-3(2))
3 A2 3 A2
2 K 2K
1 A1 1 A1
TF Package
(TO-220F-3)
3 A2
2K
1 A1
Figure 2. Pin Configuration of MBR30H100C(front view)
A1
K
A2
Apr. 2009 Rev. 1. 2
Figure 3. Internal Structure of MBR30H100C
BCD Semiconductor Manufacturing Limited
2




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