파트넘버.co.kr 4GBJ402-G 데이터시트 PDF


4GBJ402-G 반도체 회로 부품 판매점

Glass Passivated Bridge Rectifiers



Comchip 로고
Comchip
4GBJ402-G 데이터시트, 핀배열, 회로
Glass Passivated Bridge Rectifiers
4GBJ4005-G Thru. 4GBJ410-G
Reverse Voltage: 50 to 1000V
Forward Current: 4.0A
RoHS Device
Features
-Surge overload rating -150 amperes peak.
-Ideal for printed circuit board.
-UL recognized file # E217139 R
Mechanical Data
-Epoxy: U/L 94V-0 rate flame retardant.
-Case: Molded plastic, 4GBJ
-Mounting position: Any
-Weight: 4.27 gram (approx.).
4GBJ
Φ0.134(3.4)
Φ0.122(3.1)
0.118(3.00)*45°
0.996(25.3)
0.972(24.7)
0.057(1.45)
0.041(1.05)
+
0.083(2.1)
0.067(1.7)
0.043(1.1)
0.035(0.9)
~
~_
0.303(7.7)
0.287(7.3)
0.303(7.7)
0.287(7.3)
0.303(7.7)
0.287(7.3)
SPACING
0.189(4.8)
0.173(4.4)
0.150(3.8)
0.134(3.4)
0.114(2.9)
0.098(2.5)
0.031(0.8)
0.023(0.6)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol 4GBJ
4005-G
4GBJ
401-G
4GBJ
402-G
4GBJ
404-G
4GBJ
406-G
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100 200 400 600
Maximum RMS Voltage
VRMS
35
70 140 280 420
Maximum DC Blocking Voltage
VDC
Maximum Average Forward (With heatsink Note2)
Rectified Current @Tc=100°C (without hestsink)
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC Method)
Maximum Forward Voltage at 2.0A DC
Maximum Forward Voltage at 4.0A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25°C
@TJ=125°C
I 2 T Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element
(Note 1)
Typical Thermal Resistance
I(AV)
IFSM
VF
IR
I2t
CJ
RθJC
50
100 200 400 600
4.0
2.4
135
1.0
1.1
10.0
500
93
45
2.2
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 50mm*50mm*1.6mm Cu plate heatsink.
-55 to +150
-55 to +150
4GBJ
408-G
800
560
800
4GBJ
410-G
1000
700
1000
Unit
V
V
V
A
A
V
μA
A2s
pF
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR86
Comchip Technology CO., LTD.
REV: A
Page 1


4GBJ402-G 데이터시트, 핀배열, 회로
Glass Passivated Bridge Rectifiers
Rating and Characteristics Curves (4GBJ4005-G Thru. 4GBJ410-G)
Fig.1 - Forward Current Derating Curve
5.0
WITH HOCEATSINK
4.0
3.0
WITHOOCUT HEATSINK
2.0
1.0
SINGLOECPHASE HALF WAVE 60HZ
RESISTIVE OR INDUCTIVE LOAD
0.0
0 25 50 75
100
125
Case Temperature, (°C)
150
Fig.2 - Typical Forward Characteristics
10.0
1.0
0.1
TJ=150°C
TJ=25°C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage, (V)
Fig.3 - Maximum Non-Repetitive
Surge Current
150
125
100
75
TJ=25°C
HALF-SINE-WAVE
(JEDEC METHOD)
50
25
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
0
1 10
Number of cycles at 60Hz
100
Fig.5 - Typical Reverse Characteristics
1000
TJ=150O°CC
100
10
TJ=125O°CC
TJ=100°C
Fig.4 - Typical Junction Capacitance
100
TJ=25°OCC,f=1MHz
10
1
1.0 10.0
Reverse Voltage , (V)
100
1.0
TJ=25°C
0.1
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage, (%)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR86
Comchip Technology CO., LTD.
REV: A
Page 2




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Glass Passivated Bridge Rectifiers - Comchip