파트넘버.co.kr 4GBJ410 데이터시트 PDF


4GBJ410 반도체 회로 부품 판매점

GLASS PASSIVATED BRIDGE RECTIFIERS



MOD 로고
MOD
4GBJ410 데이터시트, 핀배열, 회로
4GBJ4005 THRU 4GBJ410
? .134(3.4)
? .122(3.1)
4GBJ
.995(25.3)
.983(24.7)
.118(3.0)*45°
+~ ~-
.057(1.45)
.041(1.05)
.083(2.1)
.069(1.7)
.043(1.1)
.035(0.9)
GLASS PASSIVATED BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 4.0 Amperes
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.114(2.9)
.098(2.5)
FEATURES
Surge overload rating -135 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has U/L
lammability classification 94V-0
Mounting postition:Any
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
SPACING
.031(0.8)
.023(0.6)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS
4GBJ
4005
4GBJ
401
Maximum repetitive peak reverse voltage
VRRM 50 100
Maximum RMS voltage
VRMS
35
70
Maximum DC blocking voltage
VDC 50 100
Maximum average forward(with heatsink NOTE 2)
Rectified current @T c =100 C(without heatsink)
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
Rating for Fusing(t<8.3ms)
Maximum forward voltage at 2.0A DC
Maximum forward voltage at 4.0A DC
I2t
VF
VF
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
IR
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
CJ
RθJA
TJ
TSTG
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.
3.The typical data above is for reference only(典型值仅供参考).
4GBJ
402
200
140
200
4GBJ
404
400
280
400
4.0
2.4
4GBJ
406
600
420
600
135.0
75.63
1.0
1.1
10
500
45
2.2
-55 to +150
-55 to +150
4GBJ
408
800
560
800
4GBJ
410
1000
700
1000
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
A2s
Volts
Volts
µA
µA
pF
C/W
C
C


4GBJ410 데이터시트, 핀배열, 회로
RATINGS AND CHARACTERISTIC CURVES 4GBJ4005 THRU 4GBJ410
FIG.1-FORWARD CURRENT DERATING CURVE
5.0
WITH HEATSINK
4.0
3.0 WITHOUT HEATSINK
2.0
SINGLE PHASE HALF WAVE 60HZ
1.0 RESISTIVE OR INDUCTIVE LOAD
0.0
25
50 75 100 125
CASE TEMPERATURE, °C
150
FIG.2-MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
TJ=25°C
HALF-SINE-WAVE
(JEDEC METHOD)
50
25
SINGLE HALF-SINE-WAVE
0 (JEDEC METHOD)
02
5 10
20
NUMBER OF CYCLETS AT 60Hz
50
100
FIG.3-TYPICAL FORWARD CHARACTERISTICS
10
TJ=150°C
1.0
TJ=25°C
0.1
1000
100
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
TJ=150°C
TJ=125°C
TJ=100°C
10
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
1.0 TJ=25°C
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE
FIG.5-TYPICAL JUNCTION CAPACITAONCEG (%)
100
50
TJ=25°C,f=1MHZ
10
1.0 10.0
REVERSE VOLTAGE,(VOLTS)
100
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!




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4GBJ410 rectifier

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