파트넘버.co.kr 1A16F 데이터시트 PDF


1A16F 반도체 회로 부품 판매점

PHOTO FLASH RECTIFIER



Galaxy Semi-Conductor 로고
Galaxy Semi-Conductor
1A16F 데이터시트, 핀배열, 회로
BLGALAXY ELECTRICAL
PHOTO FLASH RECTIFIER
1A10F --- 1A18F
VOLTAGE RANGE: 1000 --- 1800 V
CURRENT: 1.0A
FEATURES
Fast switching
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
MECHANICAL DATA
Case: JEDEC R--1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007ounces, 0.20 grams
Mounting position: Any
R-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
1A10F 1A12F 1A14F 1A15F 1A16F 1A18F UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
IFSM
superimposed on rated load TJ=125
Maximum instantaneous forw ard voltage
@ 1.0 A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Maximum reverse recovery time (NOTE1)
trr
Typical junction capacitance
(NOTE2)
CJ
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Rev erse recov ery test conditions:IF=0.5A,IR=-1.0A,IRR=-0.25A.
2. Mersured at 1MHZ and applied rev erse v oltage of 4.0V.
1000
700
1000
1200
840
1200
1.3
1400
980
1400
1500
1050
1500
1600
1120
1600
1.0
30.0
1.8
5.0
100.0
300
15
-55 ---- + 150
-55 ---- + 150
1800
1260
1800
V
V
V
A
A
V
μA
ns
pF
www.galaxycn.com
Document Number 0282004
BLGALAXY ELECTRICAL
1.


1A16F 데이터시트, 핀배열, 회로
RATINGS AND CHARACTERISTIC CURVES
1A10F --- 1A18F
FIG.1 -- FORWARD DERATING CURVE
1.0
.8
.6
.4
.2
0
0
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm) Lead Length
25 50 75
100
125 150
175 200
AMBIENT TEMPERATURE,
FIG.2 -- PEAK FORWARD SURGE CURRENT
30
20
TJ=125
8.3ms Single Half
Sine-Wave
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
+ 0 .5 A
trr
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
0
-0 .2 5 A
NOTES:1.RISETIME= 7ns MAX.INPUTIMPEDANCE=1M . 22pF.
Ggggggggg 2.RISETIME=10ns MAX.SOURCEIMPEDANCE=50 .
-1 .0 A
1cm
SETTIMEBASEFOR50/100 ns/cm
Document Number 0282004
BLGALAXY ELECTRICAL
www.galaxycn.com
2.




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: Galaxy Semi-Conductor

( gsc )

1A16F rectifier

데이터시트 다운로드
:

[ 1A16F.PDF ]

[ 1A16F 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


1A16F

Photo Flash Rectifiers - LGE



1A16F

PHOTO FLASH RECTIFIER - Galaxy Semi-Conductor