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Fairchild Semiconductor |
RHRG5060_F085
50A, 600V Hyperfast Rectifier
July 2014
Features
• High Speed Switching ( trr=45ns(Typ.) @ IF=50A )
• Low Forward Voltage( VF=1.67V(Typ.) @ IF=50A )
• Avalanche Energy Rated
• AEC-Q101 Qualified
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
• Automotive and General Purpose
Max Ratings (600V, 50A)
The RHRG5060_F085 is an Hyperfast™ diode with soft
recovery characteristics (trr < 45ns). It has half the
recovery time of ultrafast diode and is of silicon nitride
passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamp-
ing diode and rectifier in a variety of automotive switch-
ing power supplies and other power switching
automotive applications. Its low stored charge and
hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing
power loss in the switching transistors.
Pin Assignments
TO-247-2L
1. Cathode
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
EAVL
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
@ TC = 25°C
Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz)
Avalanche Energy (1.4A, 40mH)
Operating Junction and Storage Temperature
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
RHRG5060
Device
RHRG5060_F085
Package
TO-247
1
1. Cathode
2
2. Anode
Ratings
600
600
600
50
150
40
- 55 to +175
Max
0.42
45
Tube
-
Units
V
V
V
A
A
mJ
°C
Units
°C/W
°C/W
Quantity
30
©2014 Fairchild Semiconductor Corporation
RHRG5060_F085 Rev. C1
1
www.fairchildsemi.com
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
IR Instantaneous Reverse Current VR = 600V
VFM1
trr2
ta
tb
Qrr
Instantaneous Forward Voltage IF = 50A
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
IF =1A, di/dt = 100A/μs,
VCC= 390V
IF =50A, di/dt = 100A/μs,
VCC= 390V
IF =50A, di/dt = 100A/μs,
VCC= 390V
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
2. Guaranteed by design
Test Circuit and Waveforms
TC = 25 °C
TC = 175 °C
TC = 25 °C
TC = 175 °C
TC = 25 °C
Min.
-
-
-
-
-
Typ.
-
-
1.67
1.29
37
Max Units
250 uA
1.5 mA
2.1 V
1.7 V
45 ns
TC = 25 °C
TC = 175 °C
TC = 25 °C
-
-
-
-
-
45 60
200 -
25 -
20 -
45 -
ns
ns
ns
ns
nC
RHRG5060_F085 Rev. C1
2
www.fairchildsemi.com
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