파트넘버.co.kr MS19 데이터시트 PDF


MS19 반도체 회로 부품 판매점

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER



Pan Jit International 로고
Pan Jit International
MS19 데이터시트, 핀배열, 회로
MS14~MS120
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• High current capacity ,low VF
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: JEDEC DO-214AC molded plastic
• Terminals:Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes positive end (cathode)
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.0023 ounce, 0.0679 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive
load.
PARAMETER
S YMB OL MS 14 MS 14A MS 15 MS 16 MS 18 MS 19 MS 110 MS 115 MS 120 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM 40 45 50 60 80 90 100 150 200 V
Maximum RMS Voltage
VRMS
28 31.5 35 42 56 63 70 105 140 V
Maximum DC Blocking Voltage
VDC 40 45 50 60 80 90 100 150 200 V
Maximum Average Forward Current (See Figure 1)
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IF ( A V )
IF S M
1.0
30
A
A
Maximum Forward Voltage at 1.0A ( Note 1)
Maximum DC Reverse Current TJ=25OC
at Rated DC Blocking Voltage TJ=100OC
Typ i c a l The rma l Re s i s ta nc e (No te 2 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
V 0.7
F
IR
RθJ L
RθJ A
TJ,TS TG -55 to +150
0.74
0.80
0.05
20
30
95
-65 to +175
0.9 V
mA
OC /
W
OC
NOTES:
1.Pulse Test with PW =300µsec, 1% Duty Cycle.
2.Mounted on P.C. Board with 5.0mm2 (.013mm thick) copper pad areas.
STAD-APR.22.2009
PAGE . 1


MS19 데이터시트, 핀배열, 회로
MS14~MS120
RATING AND CHARACTERISTIC CURVES
1.0
= 40V
= 45-200V
.75
.50
.25
S I N G L EP H A S EH A L FWAV E6 0 H z
R E S I S T I V EO RI N D U C T I V EL O A D
P.C.B MOUNTED
ON 0.2 X 0.2"( 5.0 X 5. 0mm)
C O P P E RPA DA R E A S
0
0 25 50 75 100
125
150
LEAD TEMPERATURE, oC
175
Fig.1-FORWARD CURRENT DERATING CURVE
105
104
103 TJ=125OC
102
TJ=75OC
101
100
10-1
TJ=25OC
VRRM =40-60V
VRRM =80-200V
10-2
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE ,%
Fig.3-TYPICAL REVERSE CHARACTERISTIC
30
25
20
15
10
5
0
1 10 100
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON-REPETITIVEPEAKFORWARD
SURGE CURRENT
10
40 - 45 V
1.0
80-100V
0.1
50-60V
15 0-200V
TA = 25OC
0.01
0.2
0.4 0.6
0.8 1.0
FORWARD VOLTAGE, VOLTS
1.2
Fig.4-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
STAD-APR.22.2009
PAGE . 2




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: Pan Jit International

( panjit )

MS19 rectifier

데이터시트 다운로드
:

[ MS19.PDF ]

[ MS19 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


MS1

SLOW BLOW MICRO FUSE - BEL



MS1.5

Slow Blow Micro Fuse - Bel Fuse



MS1000

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS - Advanced Power Technology



MS1001

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS - Advanced Power Technology



MS1003

(MS1003 / MS1004) 10 AMP SCHOTTKY BARRIER RECTIFIERS - Microsemi Corporation



MS1003

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS - Advanced Power Technology



MS1003SH

Control IC - SHINDENGEN



MS1004

(MS1003 / MS1004) 10 AMP SCHOTTKY BARRIER RECTIFIERS - Microsemi Corporation



MS1004SH

Control IC - SHINDENGEN