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PDF SM10150D1 Data sheet ( Hoja de datos )

Número de pieza SM10150D1
Descripción Schottky Barrier Rectifiers
Fabricantes SeCoS 
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No Preview Available ! SM10150D1 Hoja de datos, Descripción, Manual

Elektronische Bauelemente
SM10150D1
Voltage 150 V
10.0 Amp Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 0.7 grams
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
TO-252 (D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J
2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F 2.80 REF P 0.58REF.
G 5.40 6.40
H 0.60 1.20
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Unit
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
150
105
V
V
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Per Leg
Per Device
Peak Forward Surge Current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage @ 5A
VDC
IF
IFSM
VF
150
5
10
100
0.87
V
A
A
A
V
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Junction Capacitance 1
TA=25°C
TA=100°C
IR
CJ
Typical Thermal Resistance 2
RθJC
Operating Temperature
TJ
Storage Temperature
TSTG
Notes:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Case. FR4 Board Heat sink size: 10*10*0.2mm.
0.2
2
250
10
-55~150
-55~150
mA
pF
°C/W
°C
°C
http://www.SeCoSGmbH.com/
27-Mar-2014 Rev. D
Any changes of specification will not be informed individually.
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