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R1RP0408DI 반도체 회로 부품 판매점

4M High Speed SRAM



Renesas 로고
Renesas
R1RP0408DI 데이터시트, 핀배열, 회로
R1RP0408DI Series
Wide Temperature Range Version
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0114-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0408DI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 36-pin plastic SOJ.
Features
Single 5.0 V supply: 5.0 V ± 10 %
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 130 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
Center VCC and VSS type pin out
Temperature range: 40 to +85°C
Ordering Information
Type No.
R1RP0408DGE-2PI
Access time
12 ns
Package
400-mil 36-pin plastic SOJ (36P0K)
Rev.1.00, Mar.12.2004, page 1 of 10


R1RP0408DI 데이터시트, 핀배열, 회로
R1RP0408DI Series
Pin Arrangement
Pin Description
Pin name
A0 to A18
I/O1 to I/O8
CS#
OE#
WE#
VCC
VSS
NC
A0
A1
A2
A3
A4
CS#
I/O1
I/O2
VCC
VSS
I/O3
I/O4
WE#
A5
A6
A7
A8
A9
36-pin SOJ
1 36
2 35
3 34
4 33
5 32
6 31
7 30
8 29
9 28
10 27
11 26
12 25
13 24
14 23
15 22
16 21
17 20
18 19
(Top View)
NC
A18
A17
A16
A15
OE#
I/O8
I/O7
VSS
VCC
I/O6
I/O5
A14
A13
A12
A11
A10
NC
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Power supply
Ground
No connection
Rev.1.00, Mar.12.2004, page 2 of 10




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R1RP0408DI ram

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