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R1LV0416DBG-7LI 반도체 회로 부품 판매점

4M SRAM



Renesas 로고
Renesas
R1LV0416DBG-7LI 데이터시트, 핀배열, 회로
R1LV0416D Series
4M SRAM (256-kword × 16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55/70 ns (max)
Power dissipation:
Standby: 3 µW (typ) (VCC = 3.0 V)
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature Range: -40 to +85°C
Rev.1.00, May.24.2007, page 1 of 15


R1LV0416DBG-7LI 데이터시트, 핀배열, 회로
R1LV0416D Series
Ordering Information
Type No.
R1LV0416DSB-5SI
R1LV0416DSB-7LI
R1LV0416DBG-5SI
R1LV0416DBG-7LI
Access time
55 ns
70 ns
55 ns
70 ns
Package
400-mil 44-pin plastic TSOP II
PTSB0044GA-A (44P3W-H)
48-ball CSP with 0.75 mm ball pitch
PTBG0048HB-A (48FHH)
Rev.1.00, May.24.2007, page 2 of 15




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R1LV0416DBG-7LI ram

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R1LV0416DBG-7LI

4M SRAM - Renesas