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Número de pieza | R1LV0416DSB-7LI | |
Descripción | 4M SRAM | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de R1LV0416DSB-7LI (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! R1LV0416D Series
4M SRAM (256-kword × 16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
Standby: 3 µW (typ) (VCC = 3.0 V)
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature Range: -40 to +85°C
Rev.1.00, May.24.2007, page 1 of 15
1 page R1LV0416D Series
Operation Table
CS1# CS2 WE# OE# UB#
H× × × ×
×L×××
× × × ×H
LHHL L
L HH L H
LHHL L
LHL × L
LHL ×H
LHL × L
L HHH ×
Note: H: VIH, L: VIL, ×: VIH or VIL
LB#
×
×
H
L
L
H
L
L
H
×
I/O0 to I/O7
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
High-Z
High-Z
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to VSS
Power dissipation
Operating temperature1
Storage temperature range
Storage temperature range under bias
Notes: 1. VT min: −3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
Symbol
V
CC
VT
PT
Topr
Tstg
Tbias
Value
−0.5 to +4.6
−0.5*1 to VCC + 0.3*2
0.7
−40 to +85
−65 to +150
−40 to +85
Unit
V
V
W
°C
°C
°C
DC Operating Conditions
Parameter
Symbol
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
VCC
V
SS
V
IH
VIL
Ta
Note:
1.
V min:
IL
−3.0 V for pulse half-width ≤ 30 ns.
Min
2.7
0
2.2
−0.3
−40
Typ Max Unit
3.0 3.6
V
00V
V + 0.3
CC
0.6
V
V
+85 °C
Note
1
Rev.1.00, May.24.2007, page 5 of 15
5 Page R1LV0416D Series
Write Timing Waveform (1) (WE# Clock)
Address
CS1#
CS2
LB#, UB#
WE#
Din
Dout
tAS*6
tWC
Valid address
tCW*5
tCW*5
tBW
tWR*7
tAW
tWP*4
tWHZ*1, 2
tDW tDH
Valid data
tOW*2
High impedance
Rev.1.00, May.24.2007, page 11 of 15
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet R1LV0416DSB-7LI.PDF ] |
Número de pieza | Descripción | Fabricantes |
R1LV0416DSB-7LI | 4M SRAM | Renesas |
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