파트넘버.co.kr R1RW0416DSB-2LR 데이터시트 PDF


R1RW0416DSB-2LR 반도체 회로 부품 판매점

4M High Speed SRAM



Renesas 로고
Renesas
R1RW0416DSB-2LR 데이터시트, 핀배열, 회로
R1RW0416D Series
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0107-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416D
is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
Features
Single 3.3 V supply: 3.3 V ± 0.3 V
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 130 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2.0 V (min) (L-version)
Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 14


R1RW0416DSB-2LR 데이터시트, 핀배열, 회로
R1RW0416D Series
Ordering Information
Type No.
R1RW0416DGE-2PR
R1RW0416DGE-2LR
R1RW0416DSB-2PR
R1RW0416DSB-2LR
Access time
12 ns
12 ns
12 ns
12 ns
Pin Arrangement
44-pin SOJ
A0
A1
A2
A3
A4
CS#
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE#
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A17
43 A16
42 A15
41 OE#
40 UB#
39 LB#
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 VSS
33 VCC
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 NC
27 A14
26 A13
25 A12
24 A11
23 A10
(Top View)
Package
400-mil 44-pin plastic SOJ (44P0K)
400-mil 44-pin plastic TSOPII (44P3W-H)
44-pin TSOP
A0
A1
A2
A3
A4
CS#
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE#
A5
A6
A7
A8
A9
1 44
2 43
3 42
4 41
5 40
6 39
7 38
8 37
9 36
10 35
11 34
12 33
13 32
14 31
15 30
16 29
17 28
18 27
19 26
20 25
21 24
22 23
(Top View)
A17
A16
A15
OE#
UB#
LB#
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
Rev.1.00, Mar.12.2004, page 2 of 14




PDF 파일 내의 페이지 : 총 16 페이지

제조업체: Renesas

( renesas )

R1RW0416DSB-2LR ram

데이터시트 다운로드
:

[ R1RW0416DSB-2LR.PDF ]

[ R1RW0416DSB-2LR 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


R1RW0416DSB-2LR

4M High Speed SRAM - Renesas