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R1RP0408DGE-2LR 반도체 회로 부품 판매점

4M High Speed SRAM



Renesas 로고
Renesas
R1RP0408DGE-2LR 데이터시트, 핀배열, 회로
R1RP0408D Series
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0112-0200
Rev. 2.00
Dec.1.2008
Description
The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 36-pin plastic SOJ.
Features
Single 5.0 V supply: 5.0 V ± 10%
Access time: 10 ns / 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 140mA /130mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 1.0 mA (max) (L-version)
Data retention current: 0.5 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center VCC and VSS type pin out
RJE03C0112-0200 Rev.2.00,
Dec.1.2008, page 1 of 12


R1RP0408DGE-2LR 데이터시트, 핀배열, 회로
R1RP0408D Series
Ordering Information
Type No.
R1RP0408DGE-0PR
R1RP0408DGE-2PR
R1RP0408DGE-2LR
Access time
10 ns
12 ns
12 ns
Package
400-mil 36-pin plastic SOJ (36P0K)
Pin Arrangement
A0
A1
A2
A3
A4
CS#
I/O1
I/O2
VCC
VSS
I/O3
I/O4
WE#
A5
A6
A7
A8
A9
36-pin SOJ
1 36
2 35
3 34
4 33
5 32
6 31
7 30
8 29
9 28
10 27
11 26
12 25
13 24
14 23
15 22
16 21
17 20
18 19
(Top View)
NC
A18
A17
A16
A15
OE#
I/O8
I/O7
VSS
VCC
I/O6
I/O5
A14
A13
A12
A11
A10
NC
RJE03C0112-0200 Rev.2.00,
Dec.1.2008, page 2 of 12




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R1RP0408DGE-2LR ram

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4M High Speed SRAM - Renesas