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R1RW0404DGE-2LR 반도체 회로 부품 판매점

4M High Speed SRAM



Renesas 로고
Renesas
R1RW0404DGE-2LR 데이터시트, 핀배열, 회로
R1RW0404D Series
4M High Speed SRAM (1-Mword × 4-bit)
REJ03C0115-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed and high density
memory, such as cache and buffer memory in system. The R1RW0404D is packaged in 400-mil 32-pin
SOJ for high density surface mounting.
Features
Single supply: 3.3 V ± 0.3 V
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 100 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 11


R1RW0404DGE-2LR 데이터시트, 핀배열, 회로
R1RW0404D Series
Ordering Information
Type No.
R1RW0404DGE-2PR
R1RW0404DGE-2LR
Access time
12 ns
12 ns
Package
400-mil 32-pin plastic SOJ (32P0K)
Pin Arrangement
32-pin SOJ
A0
A1
A2
A3
A4
CS#
I/O1
VCC
VSS
I/O2
WE#
A5
A6
A7
A8
A9
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
(Top view)
A19
A18
A17
A16
A15
OE#
I/O4
VSS
VCC
I/O3
A14
A13
A12
A11
A10
NC
Pin Description
Pin name
A0 to A19
I/O1 to I/O4
CS#
OE#
WE#
V
CC
V
SS
NC
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Power supply
Ground
No connection
Rev.1.00, Mar.12.2004, page 2 of 11




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R1RW0404DGE-2LR ram

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R1RW0404DGE-2LR

4M High Speed SRAM - Renesas