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R1LV1616HSA-4SI 반도체 회로 부품 판매점

Wide Temperature Range Version 16M SRAM



Renesas Technology 로고
Renesas Technology
R1LV1616HSA-4SI 데이터시트, 핀배열, 회로
R1LV1616H-I Series
Wide Temperature Range Version
16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)
REJ03C0195-0101
Rev.1.01
Nov.18.2004
Description
The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit.
R1LV1616H-I Series has realized higher density, higher performance and low power consumption by
employing CMOS process technology (6-transistor memory cell). It offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for
high density surface mounting.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 45/55 ns (max)
Power dissipation:
Active: 9 mW/MHz (typ)
Standby: 1.5 µW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range: 40 to +85°C
Byte function (×8 mode) available by BYTE# & A-1.
www.DataSheet4U.com
Rev.1.01, Nov.18.2004, page 1 of 19


R1LV1616HSA-4SI 데이터시트, 핀배열, 회로
R1LV1616H-I Series
Ordering Information
Type No.
R1LV1616HSA-4LI
R1LV1616HSA-4SI
R1LV1616HSA-5SI
Access time
45 ns
45 ns
55 ns
Package
48-pin plastic TSOPI (48P3R-B)
www.DataSheet4U.com
Rev.1.01, Nov.18.2004, page 2 of 19




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R1LV1616HSA-4SI ram

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R1LV1616HSA-4SI

Wide Temperature Range Version 16M SRAM - Renesas Technology