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18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE



Samsung semiconductor 로고
Samsung semiconductor
K7A163631B 데이터시트, 핀배열, 회로
K7A163631B
K7A161831B
www.DataSheet4U.com
512Kx36 & 1Mx18 Synchronous SRAM
18Mb B-die Sync. SRAM Specification
100TQFP with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
- 1 - July 2005
Rev 1.0


K7A163631B 데이터시트, 핀배열, 회로
K7A163631B
K7A161831B
www.DataSheet4U.com
512Kx36 & 1Mx18 Synchronous SRAM
Document Title
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
History
0.0 1. Initial draft
0.1 1. Update the DC current spec(ICC, ISB)
0.2 1. Change the ISB,ISB1,ISB2
- ISB ; from 120mA to 170mA
- ISB1 ; from 80mA to 150mA
- ISB2 ; from 80mA to 130mA
0.3 1. Remove the 1.8V Vdd voltage level
0.4 1. Remove the -16 speed bin
1.0 1. Finalize the datasheet
Draft Date
Remark
Mar. 23. 2004 Advance
May. 21, 2004 Preliminary
Sep. 21. 2004 Preliminary
Oct. 18, 2004 Preliminary
Jan. 04, 2005 Preliminary
July 18, 2005 Final
- 2 - July 2005
Rev 1.0




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18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE - Samsung semiconductor