파트넘버.co.kr BH62UV8001 데이터시트 PDF


BH62UV8001 반도체 회로 부품 판매점

Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit



Brilliance Semiconductor 로고
Brilliance Semiconductor
BH62UV8001 데이터시트, 핀배열, 회로
Ultra Low Power/High Speed CMOS SRAM
1M X 8 bit
Green package materials are compliant to RoHS
BH62UV8001www.DataSheet4U.com
n FEATURES
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 3.6V Operation current : 12mA (Max.)at 55ns
2mA (Max.)at 1MHz
Standby current : 2.5uA (Typ.) at 3.0V/25OC
VCC = 1.2V Data retention current : 1.2uA (Typ.) at 25OC
Ÿ High speed access time :
-55 55ns (Max.) at VCC=1.65~3.6V
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE1, CE2 and OE options
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation, no clock, no refresh
Ÿ Data retention supply voltage as low as 1.0V
n POWER CONSUMPTION
n DESCRIPTION
The BH62UV8001 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 1,048,576 by 8 bits
and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical operating current of
1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at
1.65V/85OC.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH62UV8001 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH62UV8001 is available in DICE form and 48-ball BGA
package.
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STANDBY
(ICCSB1, Max)
VCC=3.6V VCC=1.8V
BH62UV8001DI
BH62UV8001AI
Industrial
-40OC to +85OC
15uA
12uA
POWER DISSIPATION
1MHz
VCC=3.6V
10MHz
Operating
(ICC, Max)
fMax.
1MHz
VCC=1.8V
10MHz
2mA 6mA 12mA 1.5mA 5mA
fMax.
8mA
PKG TYPE
DICE
BGA-48-0608
n PIN CONFIGURATIONS
123456
A NC OE A0 A1 A2 CE2
B NC NC A3 A4 CE1 NC
C DQ0 NC A5 A6 NC DQ4
D VSS DQ1 A17 A7 DQ5 VCC
E VCC DQ2 NC A16 DQ6 VSS
F DQ3 NC A14 A15 NC DQ7
G NC NC A12 A13 WE NC
H A18 A8 A9 A10 A11 A19
48-ball BGA top view
n BLOCK DIAGRAM
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
WE
OE
VCC
GND
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 8192
8
8
Control
Data
Input
Buffer
Data
Output
Buffer
8
8
8192
Column I/O
Write Driver
Sense Amp
1024
Column Decoder
10
Address Input Buffer
A19 A18 A17 A15 A14 A13 A16 A2 A1 A0
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH62UV8001
1
Revision 1.1
May
2006


BH62UV8001 데이터시트, 핀배열, 회로
n PIN DESCRIPTIONS
Name
A0-A19 Address Input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
DQ0-DQ7 Data Input/Output
Ports
VCC
VSS
BH62UV8001www.DataSheet4U.com
Function
These 20 address inputs select one of the 1,048,576 x 8 bit in the RAM
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
8 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
n TRUTH TABLE
MODE
Chip De-selected
(Power Down)
Output Disabled
Read
Write
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
H
H
L
OE
X
X
H
L
X
I/O OPERATION
High Z
High Z
DOUT
DIN
NOTES: H means VIH; L means VIL; X means dont care (Must be VIH or VIL state)
n ABSOLUTE MAXIMUM RATINGS (1)
n OPERATING RANGE
VCC CURRENT
ICCSB, ICCSB1
ICC
ICC
ICC
SYMBOL PARAMETER
VTERM
TBIAS
Terminal Voltage with
Respect to GND
Temperature Under
Bias
TSTG
Storage Temperature
RATING UNITS
-0.5(2) to 4.6V
V
-40 to +125
OC
-60 to +150
OC
PT Power Dissipation
1.0 W
IOUT DC Output Current
20 mA
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. 2.0V in case of AC pulse width less than 30 ns
RANG
Industrial
AMBIENT
TEMPERATURE
-40OC to + 85OC
VCC
1.65V ~ 3.6V
n CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
CIN
Input
Capacitance
CIO
Input/Output
Capacitance
VIN = 0V
VI/O = 0V
6 pF
8 pF
1. This parameter is guaranteed and not 100% tested.
R0201-BH62UV8001
2
Revision 1.1
May
2006




PDF 파일 내의 페이지 : 총 9 페이지

제조업체: Brilliance Semiconductor

( brilliance )

BH62UV8001 ram

데이터시트 다운로드
:

[ BH62UV8001.PDF ]

[ BH62UV8001 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BH62UV8000

Ultra Low Power/High Speed CMOS SRAM - Brilliance Semiconductor



BH62UV8001

Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit - Brilliance Semiconductor