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23K640 반도체 회로 부품 판매점

64K SPI Bus Low-Power Serial SRAM



Microchip Technology 로고
Microchip Technology
23K640 데이터시트, 핀배열, 회로
23A640/23K640
64K SPI Bus Low-Power Serial SRAM
Device Selection Table
Part Number
23K640
23A640
VCC Range
2.7-3.6V
1.5-1.95V
Page Size
32 Byte
32 Byte
Features:
• Max. Clock 20 MHz
• Low-Power CMOS Technology:
- Read Current: 3 mA at 1 MHz
- Standby Current: 4 A Max. at +85°C
• 8192 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes:
- Byte read and write
- Page mode (32 Byte Page)
- Sequential mode
• Sequential Read/Write
• High Reliability
• Temperature Ranges Supported:
- Industrial (I):
-40C to +85C
- Automotive (E):
-40C to +125C
• Pb-Free and RoHS Compliant, Halogen Free
Pin Function Table
Name
Function
CS
SO
VSS
SI
SCK
HOLD
VCC
Chip Select Input
Serial Data Output
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
Temp. Ranges
I, E
I
Packages
P, SN, ST
P, SN, ST
Description:
The Microchip Technology Inc. 23X640 are 64 Kbit
Serial SRAM devices. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused,
transitions on its inputs will be ignored, with the
exception of Chip Select, allowing the host to service
higher priority interrupts.
The 23X640 is available in standard packages
including 8-lead PDIP and SOIC, and advanced
packaging including 8-lead TSSOP.
Package Types (not to scale)
PDIP/SOIC/TSSOP
(P, SN, ST)
CS 1
SO 2
NC 3
VSS 4
8 VCC
7 HOLD
6 SCK
5 SI
2008-2011 Microchip Technology Inc.
DS22126E-page 1


23K640 데이터시트, 핀배열, 회로
23A640/23K640
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (†)
VCC.............................................................................................................................................................................4.5V
All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ...........................................................................................................................................2kV
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I): TA = -40°C to +85°C
Automotive (E): TA = -40°C to +125°C
Param.
No.
Sym.
Characteristic
Min. Typ(1) Max. Units
Test Conditions
D001 VCC
Supply voltage
1.5 — 1.95 V 23A640 (I-Temp)
D001 VCC
Supply voltage
2.7 — 3.6 V 23K640 (I, E-Temp)
D002 VIH
High-level input
voltage
.7 VCC
— VCC +0.3 V
D003 VIL
Low-level input
voltage
-0.3 — 0.2xVCC V
0.15xVCC V 23K640 (E-Temp)
D004 VOL
Low-level output
voltage
— — 0.2 V IOL = 1 mA
D005 VOH
High-level output
VCC -0.5 —
V IOH = -400 A
voltage
D006 ILI
Input leakage
current
±0.5
A CS = VCC, VIN = VSS OR VCC
D007 ILO
Output leakage
current
±0.5
A CS = VCC, VOUT = VSS OR VCC
D008 ICC Read
Operating current
——
3 mA FCLK = 1 MHz; SO = O
——
6 mA FCLK = 10 MHz; SO = O
— — 10 mA FCLK = 20 MHz; SO = O
D009 ICCS
Standby current
— 0.2 1 A CS = VCC = 1.8V, Inputs tied to
VCC or VSS
—1
4 A CS = VCC = 3.6V, Inputs tied to
VCC or VSS
— 5 10 A CS = VCC = 3.6V, Inputs tied to
VCC or VSS @ 125°C
D010 CINT
Input capacitance
7 pF VCC = 0V, f = 1 MHz, Ta = 25°C
(Note 1)
D011 VDR
RAM data retention
1.2
V
voltage (2)
Note 1:
2:
This parameter is periodically sampled and not 100% tested. Typical measurements taken at room
temperature (25°C).
This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically
sampled and not 100% tested.
DS22126E-page 2
2008-2011 Microchip Technology Inc.




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64K SPI Bus Low-Power Serial SRAM - Microchip Technology