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EM28C1604C3FL 반도체 회로 부품 판매점

Flash and SRAM Combo Memory



NanoAmp Solutions 로고
NanoAmp Solutions
EM28C1604C3FL 데이터시트, 핀배열, 회로
EM28C1604C3FL
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM28C1604C3FL
Advance Information
Low Voltage, Extended Temperature
FLASH AND SRAM COMBO MEMORY
www.datasheet4u.com
FEATURES
• Organization: 1,048K x 16 (Flash)
256K x 16 (SRAM)
• Basic configuration:
Flash
Thirty-nine erase blocks
– Eight 4K-word parameter blocks
– Thirty-one 32K-word main memory blocks
SRAM
4Mb SRAM for data storage
– 256K-words
• F_VCC, VCCQ, F_VPP, S_VCC voltages
2.7V (MIN)/3.3V (MAX) F_VCC read voltage
2.7V (MIN)/3.3V (MAX) S_VCC read voltage
2.2V (MIN)/3.3V (MAX) VCCQ
1.8V (TYP) F_VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) F_VPP (production programming
compatibility)
1.0V (MIN) S_VCC (SRAM data retention)
• Asynchronous access time
Flash access time: 85ns @ 3.0V F_VCC
Flash access time: 90ns @ 2.7V F_VCC
SRAM access time: 85ns @ 2.7V S_VCC
• Low power consumption
• Enhanced WRITE/ERASE suspend option
• Read/Write SRAM during program/erase of Flash
• 128-bit chip OTP protection register for security
purposes
• Cross-compatible command set support
• PROGRAM/ERASE cycles
100,000 WRITE/ERASE cycles per block
BALL ASSIGNMENT
66-Ball FBGA (Top View)
1 2 3 4 5 6 7 8 9 10 11 12
A NC NC NC A11 A15 A14 A13 A12 F_Vss F_VccQ NC NC
B A16 A8
A10 A9 DQ15 S_W E# DQ14 DQ7
C F_WE # NC
DQ13
DQ6 DQ4 DQ5
D S_Vss F_RP#
DQ12 S_CE2 S_Vcc F_Vcc
E F_WP # F_Vpp
A19 DQ11
DQ10
DQ2 DQ3
F S_LB# S_UB# S_OE #
DQ9 DQ8 DQ0 DQ1
G A18 A17 A7 A6 A3 A2 A1 S_CE1#
H NC NC NC A5 A4 A0 F_CE# F_Vss F_OE# NC NC NC
OPTIONS
• Timing
90ns
MARKING
-9
• Boot Block
Top
Bottom
T
B
• Operating Temperature Range
Extended Temperature (-40oC to +85oC)
ET
• Package
66-ball FBGA (8 x 8 grid)
FL
Part Number Example:
EM28C1604C3FL-9 TET
Stock No. 23133-A 1/01
1
Advance - Subject to Change without Notice


EM28C1604C3FL 데이터시트, 핀배열, 회로
NanoAmp Solutions, Inc.
DEVICE MARKING
Due to the size of the package, NanoAmp’s standard
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross referenced to NanoAmp part
wwnwum.dbaetarsshineeTta4bul.eco1m.
GENERAL DESCRIPTION
The EM28C1604C3FL, a combination of Flash and
SRAM memory, provides a compact, low-power
solution for systems where PCB real estate is at a
premium. The device contains a nonvolatile, electrically
block-erasable (flash), programmable, read-only memory
containing 16,777,216 bits organized as 1,048,576 words
(16 bits).
The device also provides soft protection for blocks by
configuring soft protection registers with dedicated com-
mand sequences. A 128-bit (OTP )one time programmable
register is provided.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM). The WSM simplifies these operations and
relieves the system processor of secondary tasks. An
on-chip status register, can be used to monitor the WSM
status to determine the progress of a PROGRAM/ERASE
command.
The erase/program suspend functionality allows com-
patibility with existing EEPROM emulation software pack-
ages.
The device takes advantage of a dedicated power
source for the Flash device (F_VCC) and a dedicated
power source for the SRAM device (S_VCC), both at
2.7V–3.3V for optimized power consumption and im-
proved noise immunity. The separate S_VCC pin for the
EM28C1604C3FL
Advance
SRAM provides the data retention capability whenever
required. The data retention S_VCC is specified as low as
1.0V. The device supports two VPP voltages; in-circuit
VPP of 1.65V–3.3V and production compatibility of 12V
±5%. The 12V ±5% VPP is supported for a maximum of 100
cycles and 10 cumulative hours.
The EM28C1604C3FL contains an asynchronous 4Mb
SRAM organized as 256K-words by 16 bits. This device
is fabricated using an advanced CMOS process and high-
speed/ultra-low-power circuit technology.
The EM28C1604C3FL is packaged in a 66-ball FBGA
package with 0.80mm pitch.
Table 1
Cross Reference for Abbreviated Device Marks
PART NUMBER
EM28C1604C3FL-9 BET
EM28C1604C3FL-9 TET
PRODUCT
MARKING
FW650
FW651
SAMPLE
MARKING
ES650
ES651
MECHANICAL
SAMPLE MARKING
FY650
FY651
Stock No. 23133-A 1/01
2
Advance - Subject to Change without Notice




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Flash and SRAM Combo Memory - NanoAmp Solutions