K6F1008S2M 반도체 회로 부품 판매점
SRAM
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 Samsung Electronics |
K6F1008V2M, K6F1008S2M, K6F1008R2M Family
CMOS SRAM
Document Title
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1
www.DataSheet4U.com
Revise
- Erase 100ns from KM68FS1000 Family
- Add 150ns for KM68FS1000 Family
- Add 32-sTSOP1 new package
- Add high power version
ISB1=5.0µA(Max)
- Change VDR(Min) 1.0 to 1.5V
1.0 Finalize
- Concept change high power version to low low power version
ISB1=5.0µA(Max)
- Change super low power version with special handling
ISB1=1.0µA(Max)
- Icc & Icc1(Read) decrease 10 to 5mA
2.0 Revise
- Change datasheet format
- Remove reverse type package from product
- Remove reserved speed bin(100ns)
3.0 Revise
- Add CSP type packaged product.
- Improved ICC2
Draft Date
March 15, 1996
July 7, 1996
Remark
Advance
Preliminary
December 1, 1996 Final
February 26, 1998 Final
July 29, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 3.0
July 1998
K6F1008V2M, K6F1008S2M, K6F1008R2M Family
CMOS SRAM
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 128K x8 bit
• Power Supply Voltage
K6F1008V2M Family: 3.0V ~ 3.6V
K6F1008S2M Family: 2.3V ~ 3.3V
K6F1008R2M Family: 1.8V ~ 2.7V
• Low Data Retention Voltage: 1.5V(Min)
• Three state output and TTL Compatible
• Package Type: 32-SOP-525, 32-TSOP1-0820F,
32-TSOP1-0813.4F, 48-CSP
GENERAL DESCRIPTION
The K6F1008V2M, K6F1008S2M and K6F1008R2M families
are fabricated by SAMSUNG′s advanced Full CMOS process
technology. The families support various operating temperature
range and have various package types for user flexibility of sys-
tem design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
PRODUCT FAMILY
www.DataSheet4U.com
Product Family Operating Temperature Vcc Range
Speed(ns)
K6F1008V2M-C
K6F1008S2M-C Commercial(0~70°C)
K6F1008R2M-C
K6F1008V2M-I
K6F1008S2M-I Industrial(-40~85°C)
K6F1008R2M-I
3.0~3.6V
2.3~3.3V
1.8~2.7V
3.0~3.6V
2.3~3.3V
1.8~2.7V
701)/85@VCC=3.3±0.3V
701)/85@VCC=3.0±0.3V
1201)/150@VCC=2.5±0.2V
3001)@VCC=2.0±0.2V
701)/85@VCC=3.3±0.3V
701)/85/100@VCC=3.0±0.3V
1201)/150@VCC=2.5±0.2V
3001)@VCC=2.0±0.2V
Power Dissipation
Standby
(ISB1, Max)
5µA2)
Operating
(ICC2, Max)
40mA
35mA
30mA
15mA
40mA
35mA
30mA
15mA
PKG Type
32-SOP
32-TSOP1
Forward
32-sTSOP1
Forward
48-CSP
1. The parameter is measured with 30pF test load.
2. 1µA for super low power version with special handling.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
N.C 1
32
VCC
A11
A9
1
2
A16 2
31 A15
A8 3
A14 3
30
CS2
A13
WE
4
5
A12 4
29 WE CS2 6
A15 7
A7 5
28 A13 VCC 8
A6 6
27 A8
N.C 9
A16 10
A5 7
26 A9 A14 11
A4
A3
8 32-SOP 25
9 24
A11
OE
A12
A7
A6
A5
12
13
14
15
A2 10
23 A10 A4 16
32-TSOP
32-sTSOP
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A1 11
22 CS1
1 2345 6
A0 12
I/O1 13
21 I/O8
20 I/O7
A A0 A1 CS2 A3 A6 A8
I/O2 14
I/O3 15
19 I/O6
18 I/O5
B I/O5 A2 WE A4 A7 I/O1
VSS 16
17 I/O4
C I/O6
NC A5
I/O2
D VSS
VCC
E VCC
VSS
F I/O7
NC NC
I/O3
G I/O8 OE CS1 A16 A15 I/O4
H A9 A10 A11 A12 A13 A14
48-CSP - TOP VIEW
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A8
A13
A15
A16
A7
A6
A5
A4
A14
A12
I/O1
I/O8
Clk gen.
Precharge circuit.
Row
select
Memory array
1024 rows
128×8 columns
Data
cont
Data
cont
I/O Circuit
Column select
A10 A0 A1 A2 A3 A9 A11
CS1 Control
CS2
WE
logic
OE
Name
Function
CS1,CS2 Chip Select Input
N.C. No Connection
Name
Function
OE Output Enable Input
WE Write Enable Input
Name
Function
Vcc Power
Vss Ground
Name
Function
I/O1~I/O8 Data Inputs/Outputs
A0~A16 Address Inputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 3.0
July 1998
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( samsung )
K6F1008S2M ram
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