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PDF WED2ZLRSP01S Data sheet ( Hoja de datos )

Número de pieza WED2ZLRSP01S
Descripción Dual Array Synchronous Pipeline Burst NBL SRAM
Fabricantes White Electronic 
Logotipo White Electronic Logotipo



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White Electronic Designs
WED2ZLRSP01S
512K x 32/256K x 32 Dual Array
Synchronous Pipeline Burst NBL SRAM
FEATURES
Fast clock speed: 166, 150, 133, and 100MHz
Fast access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns
Fast OE# access times: 3.5ns, 3.8ns, 4.2ns, and
5.0ns
Single +2.5V ± 5% power supply (VCC)
Snooze Mode for reduced-standby power
Individual Byte Write control
Clock-controlled and registered addresses, data
I/Os and control signals
Burst control (interleaved or linear burst)
Packaging:
209-bump BGA package
Low capacitive bus loading
DESCRIPTION
The WED2ZLRSP01S, Dual Independent Array, NBL-
SSRAM device employs high-speed, Low-Power CMOS
silicon and is fabricated using an advanced CMOS process.
WEDC’s 24Mb, Sync Burst SRAM MCP integrates two
totally independent arrays, the first organized as a 512K x
32, and the second a 256K x 32.
All Synchronous inputs pass through registers controlled
by a positive edge triggered, single clock input per array.
The NBL or No Bus Latency Memory provides 100% bus
utilizaton, with no loss of cycles caused by change in modal
operation (Write to Read/Read to Write). All inputs except
for Asynchronous Output Enable and Burst Mode control
are synchronized on the positive or rising edge of Clock.
Burst order control must be tied either HIGH or LOW, Write
cycles are internally self-timed, and writes are initiated on
the rising edge of clock. This feature eliminates the need
for complex off-chip write pulse generation and proved
increased timing flexibility for incoming signals.
PIN CONFIGURATION
(TOP VIEW)
1 2 3 4 5 6 7 8 9 10 11
A Vss A_DATb0 A_DATb1 A_DATb2 A_DATb3 Vss A_DATa0 A_DATa1 A_DATa2 A_DATa3
Vss
B NC A_DATb4 A_DATb5 A_DATb6 A_DATb7 Vss A_DATa4 A_DATa5 A_DATa6 A_DATa7
NC
C A_ADR A_ADR
A_OE# A_ADV A_BWEb Vss A_BWEa A_ZZ
A_ADR A_ADR A_ADR
D A_ADR
Vss
A_CKE#
Vcc
Vcc Vcc Vcc
Vcc
Vcc A_ADR A_ADR
E A_ADR A_CK A_GWE#
Vcc
Vcc Vcc Vcc
Vcc
Vcc A_ADR1 A_ADR0
F A_ADR
Vss
A_CS2#
Vcc
Vcc Vcc Vcc
Vcc
Vcc A_ADR A_ADR
G A_ADR A_ADR A_CS1# A_CS2 A_BWEc Vss A_BWEd A_LBO# A_ADR A_ADR A_ADR
H NC A_DATc0 A_DATc1 A_DATc2 A_DATc3 Vss A_DATd0 A_DATd1 A_DATd2 A_DATd3 NC
J Vss A_DATc4 A_DATc5 A_DATc6 A_DATc7 Vss A_DATd4 A_DATd5 A_DATd6 A_DATd7 Vss
K Vss
Vss
Vss
Vss
Vss Vss Vss
Vss
Vss Vss Vss
L Vss B_DATb0 B_DATb1 B_DATb2 B_DAT3 Vss B_DATa0 B_DATa1 B_DATa2 B_DATa3
Vss
M NC B_DATb4 B_DATb5 B_DATb6 B_DAT7 Vss B_DATa4 B_DATa5 B_DATa6 B_DATa7
NC
N B_ADR B_ADR
B_OE# B_ADV B_BWEb Vss B_BWEa B_ZZ
B_ADR B_ADR B_ADR
P B_ADR
Vss
B_CKE#
Vcc
Vcc Vcc Vcc
Vcc
Vcc B_ADR B_ADR
R B_ADR B_CK B_GWE#
Vcc
Vcc Vcc Vcc
Vcc
Vcc B_ADR1 B_ADR0
T B_ADR
Vss
B_CS2#
Vcc
Vcc Vcc Vcc
Vcc
Vcc B_ADR B_ADR
U B_ADR
NC
B_CS1# B_CS2 B_BWEc Vss B_BWEd B_LBO# B_ADR B_ADR B_ADR
V NC B_DATc4 B_DATc5 B_DATc6 B_DATc7 Vss B_DATd4 B_DATd5 B_DATd6 B_DATd7 NC
W Vss
B_DATc0 B_DATc1 B_DATc2 B_DATc3 Vss B_DATd0 B_DATd1 B_DATd2 B_DATd3
Vss
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
April, 2002
Rev. 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

1 page




WED2ZLRSP01S pdf
White Electronic Designs
WED2ZLRSP01S
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vdd Supply Relative to VSS
VIN (DQx)
VIN (Inputs)
Storage Temperature (BGA)
-0.3V to +3.6V
-0.3V to +3.6V
-0.3V to +3.6V
-55°C to +125°C
Short Circuit Output Current
100mA
*Stress greater than those listed under “Absolute Maximum Ratings”: may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating condtions for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS (0°C ≤ TA ≤ 70°C)
Description
Symbol Conditions
Input High (Logic 1) Voltage
VIH
Input Low (Logic 0) Voltage
VIL
Input Leakage Current
ILI 0V ≤ VIN ≤ VCC
Output Leakage Current
ILO Output(s) Disabled, 0V ≤ VIN ≤ VCC
Output High Voltage
VOH IOH = -1.0mA
Output Low Voltage
VOL IOL = 1.0mA
Supply Voltage
VCC
NOTES:
1. All voltages referenced to VSS (GND)
2. ZZ pin has an internal pull-up, and input leakage is higher.
Min
1.7
-0.3
-5
-5
2.0
---
2.375
Max
VCC +0.3
0.7
5
5
---
0.4
2.625
Units
V
V
µA
µA
V
V
V
Notes
1
1
2
1
1
1
DC CHARACTERISTICS
Description
Symbol Conditions
Typ
166 150
MHz MHz
133
MHz
100
MHz
Units Notes
Power Supply
Current: Operating
IDD
Device Selected; All Inputs ≤ VIL or ≥ VIH; Cycle
Time = tCYC MIN; VCC = MAX; Output Open
650 600 560 500 mA 1, 2
Power Supply
Current: Standby
Device Deselected; VCC = MAX; All Inputs ≤ VSS + 0.2
ISB2 or VCC - 0.2; All Inputs Static; CK Frequency = 0;
30 60 60 60 60 mA 2
ZZ ≤ VIL
Power Supply
Current: Current
Device Selected; All Inputs ≤ VIL or ≥ VIH; Cycle
ISB3 Time =tCYC MIN; VCC = MAX; Output Open;
ZZ ≥ VCC - 0.2V
20 40 40 40 40 mA 2
Clock Running
Standby Current
Device Deselected; VCC = MAX; All Inputs
ISB4 ≤ VSS + 0.2 or VCC - 0.2; Cycle Time = tCYC
MIN; ZZ ≤ VIL
140 120 100 80 mA 2
NOTES:
1. IDD is specified with no output current and increases with faster cycle times. IDD increases with faster cycle times and greater output loading.
2. Typical values are measured at 2.5V, 25°C, and 10ns cycle time.
BGA CAPACITANCE
Description
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
Symbol
CI
CO
CA
CCK
Conditions
TA = 25°C; f = 1MHZ
TA = 25°C; f = 1MHZ
TA = 25°C; f = 1MHZ
TA = 25°C; f = 1MHZ
Typ
Max
Units
Notes
5 7 pF 1
6 8 pF 1
5 7 pF 1
3 5 pF 1
NOTES:
1. This parameter is sampled.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
April, 2002
Rev. 0
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

5 Page





WED2ZLRSP01S arduino
White Electronic Designs
WED2ZLRSP01S
FIG. 6 TIMING WAVEFORM OF CKE# OPERATION
Clock
CKE#
tCES tCEH
Address
WRITE#
A1
CEx#
A2
A3
ADV
OE#
Data Out
Data In
tCD
tLZC
tHZC
Q1
NOTES:
WRITE# = L means WE# = L, and BWx# = L
CEx# refers to the combination of CE1#, CE2 and CE2#.
Note:
Applies to both independent arrays.
tCH tCL
tCYC
A4 A5 A6
tDS tDH
D2
Q3
Q4
Dont Care
Undefined
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
April, 2002
Rev. 0
11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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