파트넘버.co.kr R1LP0408CSB-7LI 데이터시트 PDF


R1LP0408CSB-7LI 반도체 회로 부품 판매점

Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)



Hitachi Semiconductor 로고
Hitachi Semiconductor
R1LP0408CSB-7LI 데이터시트, 핀배열, 회로
PHOTOMULTIPLIER TUBE
R1878
For Photon Counting Applications
Excellent Transit Time Spread, Low After Pulse
19mm (3/4 Inch) Diameter, Multialkali Photocathode, 10-Stage, Head-on Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Base
Suitable Socket
Description/Value
300 to 850
420
Multialkali
4
Borosilicate glass
Linear focused
10
12-pin glass base
E678-12D (supplied)
Unit
nm
nm
mm dia.
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Average Anode Current
Ambient Temperature
Between Anode and Cathode
Between Anode and Last Dynode
Value
1500
250
0.1
-80 to +50
Unit
Vdc
Vdc
mA
°C
CHARACTERISTICS (at 25°C)
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Counts
Time Response
Parameter
Luminous (2856K)
Radiant at 420nm
Red/White Ratio (with R-68 filter)
Luminous (2856K)
Radiant at 420nm
Anode Pulse Rise Time
Electron Transit Time
Min.
80
30
Typ.
120
51
0.2
150
6.1 × 104
1.2 × 106
100
1.7
24
Max.
250
Unit
µA/lm
mA/W
A/lm
A/W
cps
ns
ns
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
Ratio
21111111111
Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K.


R1LP0408CSB-7LI 데이터시트, 핀배열, 회로
PHOTOMULTIPLIER TUBE R1878
Figure 1: Typical Spectral Response
TPMHB0547EB
100
10
CATHODE
RADIANT
SENSITIVITY
Figure 2: Typical Gain Characteristics
TPMHB0549EA
108
107
1 QUANTUM
EFFICIENCY
106
105
0.1
104
0.01
200
400 600 800
WAVELENGTH (nm)
1000
103
500
600 700 800
1000 1200 1400
SUPPLY VOLTAGE (V)
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
FACEPLATE
19 ± 1
4MIN.
MASKED
PHOTOCATHODE
HA COATING
DY10 DY8
P6
5
DY9 4
7 DY6
8
9 DY4
DY7 3
2
DY5 1
DY3
10 DY2
11
12
K
DY1
SHORT PIN
12PIN BASE
TPMHA0027EA
Socket
(E678-12L)
35
28.6
13
360°
13
18
2
2- 3.2
2-R4
13
18
TACCA0047EA
HOMEPAGE URL http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
TPMH1222E02
DEC. 1999




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