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EM033C08T 반도체 회로 부품 판매점

Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package



Integrated Silicon Solution  Inc 로고
Integrated Silicon Solution Inc
EM033C08T 데이터시트, 핀배열, 회로
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM033C08
EM033C08
Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package
Overview
The EM033C08 is an integrated memory device
containing a low power 256 Kbit Static Random
Access Memory organized as 32,768 words by 8
bits. The device is fabricated using an advanced
CMOS process and NanoAmp’s high-speed/low-
power circuit technology. This device is designed
to be quite effective in battery powered products
with it’s very low operating and standby currents. It
is also capable of full operation at voltages as low
as 1.5 volts. The device pinout is fully compatible
with NanoAmp’s EM02R2XX family of Combination
RAM and ROM products making it very easy to
substitute an SRAM only device where the ROM is
unneccessary in the application. This device is
extremely stable over broad temperature and volt-
age ranges.
FIGURE 1: Pin Configuration
A11
A9
A8
A13
A14
NC
CE
VCC
WE
NC
NC
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
EM033C08
STSOP, TSOP
32 OE
31 A10
30 NC
29 D7
28 D6
27 D5
26 D4
25 D3
24 VSS
23 D2
22 D1
21 D0
20 A0
19 A1
18 A2
17 A3
FIGURE 2: Operating Envelope
Features
• Extended Operating Voltage Range
1.5 to 3.6 V
• Very Low Standby Voltage
1.2 V
• Extended Temperature Range
-20o to +80oC
• Fast Cycle Time
100 ns (@ 2.7V)
• Very Low Operating Current
ICC < 1 mA typical at 3V, 1 Mhz
• Very Low Standby Current
ISB = 100 nA typical
• Available in 32-pin STSOP or TSOP
package
TABLE 1: Pin Descriptions
Pin Name
A0-A14
D0-D7
CE
OE
WE
VCC
VSS
NC
Pin Function
Address Inputs
Data Inputs/Outputs
Chip Enable (Active Low)
Output Enable (Active Low)
Write Enable (Active Low)
Power
Ground
Not Connected (Floating)
8
6
4
2
0
0
8 Mhz
5 Mhz
2.5 Mhz
1 Mhz
12
VCC (V)
3
4
Stock No. 23087-01 12/98
1


EM033C08T 데이터시트, 핀배열, 회로
NanoAmp Solutions
FIGURE 3: Functional Block Diagram
Address
Inputs
A0 - A14
Address
Decode
Logic
32K x 8
RAM Array
EM033C08
Input/
Output
Mux
and
Buffers
Data I/O
D0 - D7
CE
WE Control
Logic
OE
FIGURE 4: Functional Description
CE WE OE
HXX
LHH
LHL
L LX
D0-D7
High Z
High Z
Data Out
Data In
MODE
Standby
Standby
READ
WRITE
*The device will consume active power in this mode whenever addresses are changed
POWER
Standby
Standby*
Active -> Standby*
Active -> Standby*
TABLE 2: Absolute Maximum Ratings*
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature - Extended Commercial
VIN,OUT
VCC
PD
TSTG
TA
–0.3 to VCC+0.3
–0.3 to 4.6
500
–40 to +125
-20 to +80
V
V
mW
oC
oC
*Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating section of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Stock No. 23087-01 12/98
2




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EM033C08T ram

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