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PDF MTB1D7N03J3 Data sheet ( Hoja de datos )
| Número de pieza | MTB1D7N03J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB1D7N03J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C948J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB1D7N03J3
BVDSS
ID@VGS=10V, TC=25°C
30V
60A
ID@VGS=10V, TA=25°C
20.6A
RDS(ON)@VGS=10V, ID=20A 2.0 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 2.3 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTB1D7N03J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB1D7N03J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1D7N03J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C948J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
1000
C oss 0.8
0.6
Crss 0.4
ID=250μA
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
100
RDS(ON)
Limit
10μs
100μs
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=2.2°C/W,
single pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
100
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
VDS=15V
ID=15A
2
0
0 20 40 60 80 100 120
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
120
100 Silicon Limit
80
60
Package Limit
40
20
VGS=10V, RθJC=2.2°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB1D7N03J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB1D7N03J3.PDF ] | |
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