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Número de pieza | RU1HP60R | |
Descripción | P-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU1HP60R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU1HP60R
P-Channel Advanced Power MOSFET
Features
• -100V/-60A,
RDS (ON) =18mΩ(Typ.)@VGS=-10V
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
•Inverters
Pin Description
G
DS
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TC=25°C
-100
±25
175
-55 to 175
-60
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-240
-60
-42
188
94
0.8
62.5
A
A
W
°C/W
°C/W
400 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
1
www.ruichips.com
1 page ℃
RU1HP60R
Typical Characteristics
Output Characteristics
100
-10V
-8V
80
-6V
60
-5V
40
20
-3V
0
01234
-VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=-10V
ID=-60A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=18mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
6000
Frequency=1.0MHz
4500
Ciss
3000
1500
Coss
Crss
0
1
10
100
-VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
5
Drain-Source On Resistance
100
80
60
40
-10V
20
0
0
100
30 60 90
-ID - Drain Current (A)
120
Source-Drain Diode Forward
TJ=175°C
10
TJ=25°C
1
0.1
0.3 0.6 0.9 1.2 1.5 1.8
-VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=-80V
IDS=-60A
8
7
6
5
4
3
2
1
0
0
50 100 150
QG - Gate Charge (nC)
200
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU1HP60R.PDF ] |
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