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P-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU1HP55R 데이터시트, 핀배열, 회로
RU1HP55R
P-Channel Advanced Power MOSFET
Features
• -100V/-55A,
RDS (ON) =40m(Typ.)@VGS=-10V
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
•Inverters
Pin Description
G D S TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
IDContinuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TC=25°C
-100
±25
175
-55 to 175
-55
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-220
-55
-39
176
88
0.85
62.5
A
A
W
°C/W
°C/W
400 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
www.ruichips.com


RU1HP55R 데이터시트, 핀배열, 회로
RU1HP55R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1HP55R
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
IDSS
Zero Gate Voltage Drain Current VDS=-100V, VGS=0V
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)Drain-Source On-state Resistance VGS=-10V, IDS=-55A
Diode Characteristics
-100
-1
-30
-2 -4
±100
40 50
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=-55A, VGS=0V
ISD=-55A, dlSD/dt=100A/µs
-1.2
150
500
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-50V,
Frequency=1.0MHz
VDD=-50V,IDS=-55A,
VGEN=-10V,RG=6
1.5
3600
535
210
25
87
139
38
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-80V, VGS=-10V,
IDS=-55A
155
31
48
Unit
V
µA
V
nA
m
V
ns
nC
pF
ns
nC
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
Limited by TJmax, IAS =-40A, VDD =-60V, RG = 50, Starting TJ = 25°C.
Pulse test;Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
2
www.ruichips.com




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P-Channel Advanced Power MOSFET - Ruichips