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Ruichips |
RU1H60R
N-Channel Advanced Power MOSFET
Features
• 100V/60A,
RDS (ON) =17 mΩ(Typ.)@VGS=10V
RDS (ON) =18.5 mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Switching Applications
Pin Description
TO-220
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– DEC., 2012
Rating
100
±20
175
-55 to 175
①
60
②
240
①
60
39
120
60
1.25
Unit
V
°C
°C
A
A
A
W
W
°C/W
169 mJ
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RU1H60R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H60R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS=0V, IDS=250µA
100
VDS=100V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
1
④
RDS(ON) Drain-Source On-state Resistance
VGS=10V, IDS=30A
VGS=4.5V, IDS=20A
1
30
23
±100
17 20
18.5 25
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
④
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
⑤
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
⑤
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=30A, VGS=0V
ISD=30A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=50V,
Frequency=1.0MHz
VDD=50V, RL=1.6Ω,
IDS=30A, VGEN=10V,
RG=4.7Ω
VDS=80V, VGS=10V,
IDS=30A
1.2 V
47 ns
92 nC
1.5
4050
760
190
13
18
32
50
Ω
pF
ns
52
12 nC
16
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Pulse width limited by safe operating area.
③Limited by TJmax, IAS =26A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– DEC., 2012
2
www.ruichips.com
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