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RU1H60R 반도체 회로 부품 판매점

N-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU1H60R 데이터시트, 핀배열, 회로
RU1H60R
N-Channel Advanced Power MOSFET
Features
• 100V/60A,
RDS (ON) =17 (Typ.)@VGS=10V
RDS (ON) =18.5 (Typ.)@VGS=4.5V
Super High Dense Cell Design
• Ultra Low On-Resistance
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Switching Applications
Pin Description
TO-220
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
CopyrightRuichips Semiconductor Co., Ltd
Rev. B– DEC., 2012
Rating
100
±20
175
-55 to 175
60
240
60
39
120
60
1.25
Unit
V
°C
°C
A
A
A
W
W
°C/W
169 mJ
www.ruichips.com


RU1H60R 데이터시트, 핀배열, 회로
RU1H60R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H60R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS=0V, IDS=250µA
100
VDS=100V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
1
RDS(ON) Drain-Source On-state Resistance
VGS=10V, IDS=30A
VGS=4.5V, IDS=20A
1
30
23
±100
17 20
18.5 25
V
µA
V
nA
m
m
Diode Characteristics
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=30A, VGS=0V
ISD=30A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=50V,
Frequency=1.0MHz
VDD=50V, RL=1.6,
IDS=30A, VGEN=10V,
RG=4.7
VDS=80V, VGS=10V,
IDS=30A
1.2 V
47 ns
92 nC
1.5
4050
760
190
13
18
32
50
pF
ns
52
12 nC
16
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =26A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
CopyrightRuichips Semiconductor Co., Ltd
Rev. B– DEC., 2012
2
www.ruichips.com




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RU1H60R mosfet

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N-Channel Advanced Power MOSFET - Ruichips