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PDF RU1H300Q Data sheet ( Hoja de datos )
| Número de pieza | RU1H300Q | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU1H300Q
N-Channel Advanced Power MOSFET
Features
• 100V/300A,
RDS (ON) =3mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
• Power Supply
Pin Description
G
DS
TO247
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100
±25
175
-55 to 175
300
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
1200
300
210
600
300
0.25
50
A
A
W
°C/W
°C/W
2450
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
www.ruichips.com
1 page  
RU1H300Q
Typical Characteristics
Output Characteristics
280
6,7,8,10V
240
200
160
120 5V
80
3V
40
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=90A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=3mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
20000
18000
16000
14000
Frequency=1.0MHz
Ciss
12000
10000
8000
6000
4000
2000
0
Crss
1
Coss
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
Drain-Source On Resistance
10
8
6
10V
4
2
0
0
100
100 200
ID - Drain Current (A)
300
Source-Drain Diode Forward
TJ=175°C
10
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=80V
IDS=90A
8
Gate Charge
7
6
5
4
3
2
1
0
0
100 200 300 400
QG - Gate Charge (nC)
500
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RU1H300Q.PDF ] | |
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