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Número de pieza | RU1H130S | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU1H130S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU1H130S
N-Channel Advanced Power MOSFET
Features
•100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
D
Applications
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
G
S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100
±25
175
-55 to 175
130
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
520 A
130
A
92
300
W
150
0.5 °C/W
62.5 °C/W
552 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
1
www.ruichips.com
1 page RU1H130S
Typical Characteristics
Output Characteristics
60
VGS=7,8,10V
50
40
30 5V
20
3V
10
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=65A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=7mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
8000
7000
Frequency=1.0MHz
6000
5000
Ciss
4000
3000
2000
1000
0
Crss
1
Coss
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
5
Drain-Source On Resistance
15
12
10V
9
6
3
0
0 20 40 60 80 100 120
ID - Drain Current (A)
Source-Drain Diode Forward
100
TJ=175°C
10
1 TJ=25°C
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-Drain Voltage (V)
10
9 VDS=80V
IDS=65A
8
Gate Charge
7
6
5
4
3
2
1
0
0
50 100
QG - Gate Charge (nC)
150
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU1H130S.PDF ] |
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