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Ruichips |
RU1H190S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/190A,
RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• Switching Application Systems
Pin Description
TO-220
TO-263
TO-220F
TO-247
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
Rating
100
±25
175
-55 to 175
190
①
720
②
190
②
120
250
125
0.55
Unit
V
°C
°C
A
A
A
W
°C/W
1240
mJ
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RU1H190S
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H190S
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=250µA
VDS= 100V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS= 10V, IDS=80A
100
2
V
1
µA
30
34V
±100 nA
5 6.5 mΩ
Diode Characteristics
④
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
⑤
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
⑤
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=80 A, VGS=0V
ISD=80A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=30V, RL=30Ω,
IDS=80A, VGEN= 10V,
RG=6Ω
VDS=80V, VGS= 10V,
IDS=80A
1.2 V
89 ns
175 nC
1.2
6500
940
650
29
38
80
125
Ω
pF
ns
158 208
35
52
nC
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A..
Limited by TJmax, IAS =65A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
2
www.ruichips.com
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