파트넘버.co.kr RU1H190S 데이터시트 PDF


RU1H190S 반도체 회로 부품 판매점

N-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU1H190S 데이터시트, 핀배열, 회로
RU1H190S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/190A,
RDS (ON) =5m(Type) @ VGS=10V,IDS=80A
Ultra Low On-Resistance
Exceptional dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
175°C Operating Temperature
• Lead Free and Green Available
Applications
Switching Application Systems
Pin Description
TO-220
TO-263
TO-220F
TO-247
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
Rating
100
±25
175
-55 to 175
190
720
190
120
250
125
0.55
Unit
V
°C
°C
A
A
A
W
°C/W
1240
mJ
www.ruichips.com


RU1H190S 데이터시트, 핀배열, 회로
RU1H190S
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H190S
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=250µA
VDS= 100V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS= 10V, IDS=80A
100
2
V
1
µA
30
34V
±100 nA
5 6.5 m
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=80 A, VGS=0V
ISD=80A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=30V, RL=30,
IDS=80A, VGEN= 10V,
RG=6
VDS=80V, VGS= 10V,
IDS=80A
1.2 V
89 ns
175 nC
1.2
6500
940
650
29
38
80
125
pF
ns
158 208
35
52
nC
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A..
Limited by TJmax, IAS =65A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
2
www.ruichips.com




PDF 파일 내의 페이지 : 총 10 페이지

제조업체: Ruichips

( ruichips )

RU1H190S mosfet

데이터시트 다운로드
:

[ RU1H190S.PDF ]

[ RU1H190S 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RU1H190R

N-Channel Advanced Power MOSFET - Ruichips



RU1H190S

N-Channel Advanced Power MOSFET - Ruichips