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RU1H100 반도체 회로 부품 판매점

N-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU1H100 데이터시트, 핀배열, 회로
RU1H100
N-Channel Advanced Power MOSFET
Features
100V/75A
RDS (ON)=11m(Typ.) @ VGS=10V
Ultra Low On-Resistance
Extremely high dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
Applications
·High Speed Power Switching
·Uninterruptible Power Supply
Pin Description
TO-220
TO-220F
TO-247
TO-263
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
StoragEeASTemperatAuvrealaRnacnhgeeEnergy ,Single Pulsed
-55 to 150
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
100
±25
175
-55 to 175
75
300
75
59
200
100
0.75
62.5
400
Unit
V
°C
°C
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev.A –SEP., 2010
www.ruichips.com


RU1H100 데이터시트, 핀배열, 회로
RU1H100
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H100
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
100
VDS= 100V, VGS=0V
IDSS Zero Gate Voltage Drain Current
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
2
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
V
1
µA
30
34V
±100 nA
11 14 m
Diode Characteristics
VSD
Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 50V,
Frequency=1.0MHz
VDD=50V,IDS= 40A, VGEN=
10V,RG=5.6
VDS=80V, VGS= 10V,
IDS=40A
1.2 V
36 ns
46 nC
1.5
3450
265
148
19
86
55
69
pF
ns
85 135
20 nC
35
Notes:
Current limited by package.
Limited by TJmax, IAS =40A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C
Pulse test ; Pulse width400µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
2
www.ruichips.com




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RU1H100 mosfet

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