파트넘버.co.kr AP02N90JB 데이터시트 PDF


AP02N90JB 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Advanced Power Electronics 로고
Advanced Power Electronics
AP02N90JB 데이터시트, 핀배열, 회로
Advanced Power
Electronics Corp.
AP02N90JB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
D
RoHS Compliant & Halogen-Free
G
Description
S
AP02N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-251S short lead package is preferred for all commercial-
industrial through-hole applications without lead-cutted.
BVDSS
RDS(ON)
ID
900V
7.2Ω
1.9A
GDS
TO-251S
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
900 V
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
EAS
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy2
+30 V
1.9 A
1.2 A
6A
62.5 W
1.13 W
18 mJ
IAR
TSTG
TJ
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
1.9
-55 to 150
-55 to 150
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2
110
Units
/W
/W
1
201505271


AP02N90JB 데이터시트, 핀배열, 회로
AP02N90JB
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V, ID=250uA
VGS=10V, ID=0.85A
VDS=VGS, ID=250uA
VDS=10V, ID=1.9A
VDS=720V, VGS=0V
VGS=+30V, VDS=0V
ID=1.9A
VDS=540V
VGS=10V
VDD=450V
ID=1.9A
RG=10Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
.
Test Conditions
IS=1.9A, VGS=0V
IS=1.9A, VGS=0V,
dI/dt=100A/µs
900 - - V
- - 7.2 Ω
2 - 4V
-2-S
- - 100 uA
- - +100 nA
- 12 20 nC
- 2.5 - nC
- 4.7 - nC
- 10 - ns
-5
- ns
- 18 - ns
- 9 - ns
- 630 1000 pF
- 40 - pF
- 4 - pF
Min. Typ. Max. Units
- - 1.3 V
- 360 - ns
- 1.8 - µC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Advanced Power Electronics

( ape )

AP02N90JB mosfet

데이터시트 다운로드
:

[ AP02N90JB.PDF ]

[ AP02N90JB 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


AP02N90J

N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics



AP02N90J-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics



AP02N90J-HF-3

N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics



AP02N90JB

N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics