파트넘버.co.kr FL20KM-5A 데이터시트 PDF


FL20KM-5A 반도체 회로 부품 판매점

Nch POWER MOSFET



Mitsubishi 로고
Mitsubishi
FL20KM-5A 데이터시트, 핀배열, 회로
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
FL20KM-5A
MITSUBISHI POWER MOSFET
FL20KM-5A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
q 10V DRIVE
q VDSS ................................................................................ 250V
q rDS (ON) (MAX) .............................................................. 0.19
q ID ......................................................................................... 20A
q Viso ................................................................................ 2000V
APPLICATION
Inverter type fluorescent light sets, SMPS
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
ŒŽ

ΠGATE
Œ
 DRAIN
Ž SOURCE
Ž
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
L = 200µH
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
250
±30
20
60
20
35
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
W
°C
°C
V
g
Aug. 1999


FL20KM-5A 데이터시트, 핀배열, 회로
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI POWER MOSFET
FL20KM-5A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±30V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50
IS = 10A, VGS = 0V
Channel to case
IS = 20A, VGS = 0V, dis/dt = –100A/µs
Limits
Unit
Min. Typ. Max.
250 —
—V
±30 —
—V
— — ±10 µA
— — 1.0 mA
2.0 3.0 4.0 V
0.15 0.19
1.50 1.90
V
— 12 — S
— 1300 — pF
— 250 — pF
— 40 — pF
— 25 — ns
— 50 — ns
— 200 — ns
— 80 — ns
— 1.5 2.0 V
— — 3.57 °C/W
— 300 — ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10-1
7 Tc = 25°C
5 Single Pulse
3
2
2 3 5 7 101 2 3
tw = 10µs
100µs
1ms
10ms
100ms
DC
5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
PD = 35W
VGS = 20V
7V
40
10V
Tc = 25°C
30 Pulse Test
6V
20
10 5V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 20V Tc = 25°C
Pulse Test
16 10V
6V
12 5V
8
PD = 35W
4
4V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
Aug. 1999




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FL20KM-5A mosfet

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Nch POWER MOSFET - Mitsubishi