파트넘버.co.kr FY7BCH-02B 데이터시트 PDF


FY7BCH-02B 반도체 회로 부품 판매점

Nch POWER MOSFET



Mitsubishi 로고
Mitsubishi
FY7BCH-02B 데이터시트, 핀배열, 회로
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
FY7BCH-02B
MITSUBISHI POWER MOSFET
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
OUTLINE DRAWING
“
Dimensions in mm
q 2.5V DRIVE
q VDSS .................................................................................. 20V
q rDS (ON) (MAX) .............................................................. 21m
q ID ............................................................................................ 7A
APPLICATION
Motor control, Lamp control, Solenoid control,
DC-DC converte, etc
Œ
3.0
0.275
0.65
Œ
1.1
Œ “ DRAIN
 Ž ‘ ’ SOURCE
  GATE
“

Ž
TSSOP8
‘’
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
20
±10
7
49
7
1.5
6.0
1.6
–55~+150
–55~+150
0.035
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Aug. 1999


FY7BCH-02B 데이터시트, 핀배열, 회로
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI POWER MOSFET
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 4V
ID = 3.5A, VGS = 2.5V
ID = 7A, VGS = 4V
ID = 7A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50
IS = 1.5A, VGS = 0V
Channel to ambiet
IS = 1.5A, dis/dt = –50A/µs
Limits
Unit
Min. Typ. Max.
20 — — V
— — ±0.1 µA
— — 0.1 mA
0.5 0.8 1.3 V
— 17 21 m
— 21 30 m
— 0.119 0.147 V
— 20 — S
— 1350 — pF
— 400 — pF
— 300 — pF
— 30 — ns
— 80 — ns
— 150 — ns
— 160 — ns
0.75 1.10
V
— — 78.1 °C/W
— 50 — ns
Aug. 1999




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FY7BCH-02B mosfet

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