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C2M0025120D 반도체 회로 부품 판매점

Silicon Carbide Power MOSFET



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C2M0025120D 데이터시트, 핀배열, 회로
VDS 1200 V
C2M0025120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
90 A
RDS(on) 25 m
N-Channel Enhancement Mode
Features
Package
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
TO-247-3
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC converters
Battery Chargers
Motor Drive
Pulsed Power Applications
Part Number
C2M0025120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
ID(pulse) Pulsed Drain Current
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
1200
-10/+25
-5/+20
90
60
250
463
-55 to
+150
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS =20 V, TC = 25˚C
VGS =20 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
TL Solder Temperature
Md Mounting Torque
260 ˚C 1.6mm (0.063”) from case for 10s
1
8.8
Nm
lbf-in
M3 or 6-32 screw
Note
Fig. 19
Fig. 22
Fig. 20
1 C2M0025120D Rev. B, 10-2015


C2M0025120D 데이터시트, 핀배열, 회로
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
1200
2.0
2.6
2.1
4
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs Transconductance
2 100
600
25 34
43
23.6
21.7
Ciss Input Capacitance
2788
Coss Output Capacitance
220
Crss Reverse Transfer Capacitance
15
Eoss Coss Stored Energy
121
EAS Avalanche Energy, Single Pluse
3.5
EON Turn-On Switching Energy
1.4
EOFF Turn Off Switching Energy
0.3
td(on) Turn-On Delay Time
14
tr Rise Time
32
td(off)
Turn-Off Delay Time
29
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
28
1.1
46
50
161
Unit
V
V
V
μA
nA
mΩ
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 15mA
VDS = VGS, ID = 15mA, TJ = 150 °C
VDS = 1200 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 50 A
VGS = 20 V, ID = 50 A, TJ = 150 °C
VDS= 20 V, IDS= 50 A
VDS= 20 V, IDS= 50 A, TJ = 150 °C
VGS = 0 V
pF VDS = 1000 V
f = 1 MHz
μJ VAC = 25 mV
J ID = 50A, VDD = 50V
mJ VDS = 800 V, VGS = -5/20 V,
ID = 50A, RG(ext) = 2.5Ω,L= 412 μH
VDD = 800 V, VGS = -5/20 V
ID = 50 A,
ns RG(ext) = 2.5 Ω, RL = 16 Ω
Timing relative to VDS
Per IEC60747-8-4 pg 83
Ω f = 1 MHz, VAC = 25 mV, ESR of CISS
VDS = 800 V, VGS = -5/20 V
nC ID = 50 A
Per IEC60747-8-4 pg 83
Reverse Diode Characteristics
Symbol Parameter
Typ. Max.
VSD Diode Forward Voltage
3.3
3.1
IS Continuous Diode Forward Current
90
trr Reverse Recovery Time
45
Qrr Reverse Recovery Charge
406
Irrm Peak Reverse Recovery Current
13.5
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Unit Test Conditions
V VGS = - 5 V, ISD = 25 A
V VGS = - 5 V, ISD = 25 A, TJ = 150 °C
TC= 25 °C
ns VGS = - 5 V, ISD = 50 A ,TJ = 25 °C
nC VR = 800 V
dif/dt = 1000 A/µs
A
Symbol
RθJC
RθJC
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
Typ.
0.24
Max.
0.27
40
Unit
°C/W
Test Conditions
Note
Fig. 11
Fig.
4,5,6
Fig. 7
Fig.
17,18
Fig 16
Fig. 29
Fig. 25
Fig. 27
Fig. 12
Note
Fig. 8, 9,
10
Note 1
Note 1
Note
Fig. 21
2 C2M0025120D Rev. B, 10-2015




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